Shosuke Fujii

Publication Activity (10 Years)

Years Active: 2018-2023
Publications (10 Years): 6

Top Topics

High Efficiency

Memory Requirements

Latent Semantic Indexing

Top Venues

Publications

Yuya Matsuzawa, Yuki Ohnishi, Kazuhiro Katono, Yusuke Muto, Takayuki Tsukagoshi, Hiroki Tokuhira, Kei Sakamoto, Hisakazu Matsumori, Hiroyuki Ode, Shosuke Fujii, Hide Tanaka, Takeshi Fujimaki
One-Pulse-Programmable Multi-Level PCM/Selector Cross-Point Memory for 20 nm Half Pitch and Beyond. ESSDERC (2023)
Takamasa Hamai, Kunifumi Suzuki, Reika Ichihara, Yusuke Higashi, Yoko Yoshimura, Kiwamu Sakuma, Kensuke Ota, Kota Takahashi, Kazuhiro Matsuo, Shosuke Fujii, Masumi Saitoh
Novel Operation Scheme for Suppressing Disturb in HfO2-based FeFET Considering Charge- Trapping-Coupled Polarization Dynamics. IRPS (2023)
Marina Yamaguchi, Shosuke Fujii, Kensuke Ota, Masumi Saitoh
Breakdown Lifetime Analysis of HfO2-based Ferroelectric Tunnel Junction (FTJ) Memory for In-Memory Reinforcement Learning. IRPS (2020)
Shosuke Fujii, Reika Ichihara, Takuya Konno, Marina Yamaguchi, Harumi Seki, Hiroki Tanaka, Dandan Zhao, Yoko Yoshimura, Masumi Saitoh, Masato Koyama
Ag Ionic Memory Cell Technology for Terabit-Scale High-DensityApplication. VLSI Circuits (2019)
Masumi Saitoh, Shosuke Fujii, Minoru Oda, Marina Yamaguchi, Shoichi Kabuyanagi, Yoko Yoshimura, Kensuke Ota, Kiwamu Sakuma, Yuuichi Kamimuta
Emerging Non-Volatile Memory and Thin-Film Transistor Technologies for Future 3D-LSI. ESSDERC (2018)
Marina Yamaguchi, Shosuke Fujii, Yuuichi Kamimuta, Shoichi Kabuyanagi, Tsunehiro Ino, Yasushi Nakasaki, Riichiro Takaishi, Reika Ichihara, Masumi Saitoh
Impact of specific failure mechanisms on endurance improvement for HfO2-based ferroelectric tunnel junction memory. IRPS (2018)