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Impact of specific failure mechanisms on endurance improvement for HfO2-based ferroelectric tunnel junction memory.

Marina YamaguchiShosuke FujiiYuuichi KamimutaShoichi KabuyanagiTsunehiro InoYasushi NakasakiRiichiro TakaishiReika IchiharaMasumi Saitoh
Published in: IRPS (2018)
Keyphrases
  • high level
  • significant improvement
  • memory usage
  • neural network
  • database
  • multiscale
  • building blocks
  • memory requirements
  • simulation model
  • computing power
  • high impact