Login / Signup

High-K incorporated in a SiON tunnel layer for 3D NAND programming voltage reduction.

L. BreuilL. NynsS. RachidiK. BanerjeeAntonio ArreghiniJ. BastosS. RameshG. Van den BoschMaarten Rosmeulen
Published in: IMW (2022)
Keyphrases
  • programming language
  • programming course
  • wide range
  • silicon dioxide
  • power system
  • multi layer
  • object oriented programming
  • database
  • data sets
  • high precision
  • simulation model
  • computer programming
  • flash memory