First demonstration of ferroelectric Si: HfO2 based 3D FE-FET with trench architecture for dense nonvolatile memory application.
K. BanerjeeL. BreuilA. P. MileninM. PakJ. StiersSean R. C. McMitchellL. Di PiazzaG. Van den BoschJan Van HoudtPublished in: IMW (2021)