Eric Karl

Publication Activity (10 Years)

Years Active: 2005-2024
Publications (10 Years): 20

Top Topics

User Acceptance

Top Venues

IEEE J. Solid State Circuits

VLSI Technology and Circuits

Publications

Daeyeon Kim, Yusung Kim, Ayush Shrivastava, Gyusung Park, Anandkumar Mahadevan Pillai, Kunal Bannore, Tri Doan, Muktadir Rahman, Gwanghyeon Baek, Clifford Ong, Xiaofei Wang, Zheng Guo, Eric Karl
15.2 A 2048x60m4 SRAM Design in Intel 4 with an Around-the-Array Power-Delivery Scheme Using PowerVia. ISSCC (2024)
Yusung Kim, Clifford Ong, Anandkumar Mahadevan Pillai, Harish Jagadeesh, Gwanghyeon Baek, Iqbal Rajwani, Zheng Guo, Eric Karl
Energy-Efficient High Bandwidth 6T SRAM Design on Intel 4 CMOS Technology. IEEE J. Solid State Circuits 58 (4) (2023)
M. Shamanna, E. Abuayob, G. Aenuganti, C. Alvares, J. Antony, A. Bahudhanam, A. Chandran, P. Chew, A. Chatterjee, B. Chauhan, N. Dandeti, J. Desai, M. Doyle, T. Dmukauskas, P. Farache, E. Fetzer, K. Fischer, P. Hack, Y. Greenzweig, J. Giacobbe, Walid M. Hafez, E. Haralson, A. Hegde, A. Illa, M. Islam, S. Jain, M. Jang, J. Nguyen, T. Tong, L. Jiang, Eric Karl, P. Kalangi, G. Khoo, A. Krishnamoorthy, B. Kuns, W. Li, R. Livengood, T. Malik, R. Priyanka, H. Faraby, Y. Maymon, K. Mistry, K. Morgan, S. Natarajan, O. Nevo, M. Oh, P. Pardy, J. Park, P. Penmatsa, B. Phelps, C. Peterson, S. Rajappa, A. Raveh, A Rezaie, T. Ravishankar, R. Ramaswamy, S. Reddy, R. Saha, S. Sen, R. Sanchez, R. Sanaga, B. Simkhovich, Bernhard Sell, M. Senger, B. Schnarch, M. Seshadri, O. Sidorov, S. Subramanian, K. Subramanian, B. Truong, S. Bangalore, Jeffery Hicks, S. Venkatesh, D. Christensen, K. Bhargav, M. Von Haartman, P. Joshi, S. Zickel, C.-H. Lin, J. Huening, T.-H. Wu, N. Bakken, A. Afzal, A. Raman, Sj. Rao, V. Kawar, J. Neirynck, D. Bradley, M. Duwe, S. Wu, V. Patil, M. Bayoumy
E-Core Implementation in Intel 4 with PowerVia (Backside Power) Technology. VLSI Technology and Circuits (2023)
Stafford Hutchins, Jiabo Li, Atresh Sanne, Zhanping Chen, Mohammad M. Hasan, Uddalak Bhattacharya, Eric Karl, Jaydeep P. Kulkarni
A High Output Power 1V Charge Pump and Power Switch for Configurable, In-Field-Programmable Metal eFuse on Intel 4 Logic Technology. VLSI Technology and Circuits (2022)
Yusung Kim, Clifford Ong, Anandkumar Mahadevan Pillai, Harish Jagadeesh, Gwanghyeon Baek, Iqbal Rajwani, Zheng Guo, Eric Karl
Energy-Efficient High Bandwidth 6T SRAM Design on Intel 4 CMOS Technology. VLSI Technology and Circuits (2022)
Wilfred Gomes, Altug Koker, Patrick N. Stover, Doug B. Ingerly, Scott Siers, Srikrishnan Venkataraman, Chris Pelto, Tejas Shah, Amreesh Rao, Frank O'Mahony, Eric Karl, Lance Cheney, Iqbal Rajwani, Hemant Jain, Ryan Cortez, Arun Chandrasekhar, Basavaraj Kanthi, Raja Koduri
Ponte Vecchio: A Multi-Tile 3D Stacked Processor for Exascale Computing. ISSCC (2022)
Eric Karl, Shinichiro Shiratake, Jonathan Chang
Session 24 Overview: Advanced Embedded Memories Memory Subcommittee. ISSCC (2021)
Victoria Böhm, Christian Wolff, Corinna Geiselhart, Eric Karl, Nina Kleindienst
Investigating Barriers for the Adoption of the German Contact-Tracing App and the Influence of a Video Intervention on User Acceptance. Mensch und Computer (2021)
Ravi R. Iyer, Vivek De, Ramesh Illikkal, David A. Koufaty, Bhushan Chitlur, Andrew Herdrich, Muhammad M. Khellah, Fatih Hamzaoglu, Eric Karl
Advances in Microprocessor Cache Architectures Over the Last 25 Years. IEEE Micro 41 (6) (2021)
Christopher Gonzalez, Huichu Liu, Mijung Noh, Eric Karl, Thomas Toifl, Shawn Hsu
F5: Enabling New System Architectures with 2.5D, 3D, and Chiplets. ISSCC (2021)
Friedel Gerfers, Ping-Hsuan Hsieh, Dejan Markovc, Jun Deguchi, Eric Karl
Introduction to the Special Issue on the 2020 IEEE International Solid-State Circuits Conference (ISSCC). IEEE J. Solid State Circuits 56 (1) (2021)
Hugh Mair, Shinichiro Shiratake, Eric Karl, Thomas Burd, Jonathan Chang, Debbie Marr, Samuel Naffziger, Henk Corporaal, Ken Takeuchi, Naresh R. Shanbhag
SE1: What Technologies Will Shape the Future of Computing? ISSCC (2021)
Zheng Guo, Jami Wiedemer, Yusung Kim, Prithvee Sundararajan Ramamoorthy, Prateeksha Bindiganavile Sathyaprasad, Smita Shridharan, Daeyeon Kim, Eric Karl
A 10nm SRAM Design using Gate-Modulated Self-Collapse Write Assist Enabling 175mV VMIN Reduction with Negligible Power Overhead. VLSI Circuits (2020)
Zheng Guo, Daeyeon Kim, Satyanand Nalam, Jami Wiedemer, Xiaofei Wang, Eric Karl
A 23.6-Mb/mm $^{2}$ SRAM in 10-nm FinFET Technology With Pulsed-pMOS TVC and Stepped-WL for Low-Voltage Applications. IEEE J. Solid State Circuits 54 (1) (2019)
Zheng Guo, Daeyeon Kim, Satyanand Nalam, Jami Wiedemer, Xiaofei Wang, Eric Karl
SRAM in 10nm FinFET technology with pulsed PMOS TVC and stepped-WL for low-voltage applications. ISSCC (2018)
Jaydeep P. Kulkarni, John Keane, Kyung-Hoae Koo, Satyanand Nalam, Zheng Guo, Eric Karl, Kevin Zhang
1R1W 8T SRAM Arrays Operating Down to 560 mV Utilizing Small-Signal Sensing With Charge Shared Bitline and Asymmetric Sense Amplifier in 14 nm FinFET CMOS Technology. IEEE J. Solid State Circuits 52 (1) (2017)
John Keane, Jaydeep Kulkarni, Kyung-Hoae Koo, Satyanand Nalam, Zheng Guo, Eric Karl, Kevin Zhang
17.2 5.6Mb/mm2 1R1W 8T SRAM arrays operating down to 560mV utilizing small-signal sensing with charge-shared bitline and asymmetric sense amplifier in 14nm FinFET CMOS technology. ISSCC (2016)
Eric Karl, Zheng Guo, James W. Conary, Jeffrey L. Miller, Yong-Gee Ng, Satyanand Nalam, Daeyeon Kim, John Keane, Xiaofei Wang, Uddalak Bhattacharya, Kevin Zhang
A 0.6 V, 1.5 GHz 84 Mb SRAM in 14 nm FinFET CMOS Technology With Capacitive Charge-Sharing Write Assist Circuitry. IEEE J. Solid State Circuits 51 (1) (2016)
Eric Karl, Zheng Guo, James W. Conary, Jeffrey L. Miller, Yong-Gee Ng, Satyanand Nalam, Daeyeon Kim, John Keane, Uddalak Bhattacharya, Kevin Zhang
17.1 A 0.6V 1.5GHz 84Mb SRAM design in 14nm FinFET CMOS technology. ISSCC (2015)
Chia-Hong Jan, F. Al-amoody, H.-Y. Chang, T. Chang, Y.-W. Chen, N. Dias, Walid M. Hafez, Doug B. Ingerly, M. Jang, Eric Karl, S. K.-Y. Shi, K. Komeyli, H. Kilambi, A. Kumar, K. Byon, C.-G. Lee, J. Lee, T. Leo, P.-C. Liu, N. Nidhi, R. Olac-vaw, C. Petersburg, K. Phoa, Chetan Prasad, C. Quincy, R. Ramaswamy, T. Rana, L. Rockford, Aravinth Subramaniam, C. Tsai, Peter Vandervoorn, L. Yang, A. Zainuddin, Peng Bai
SRAM cells, optimized for low power, high performance and high density SoC products. VLSIC (2015)
Eric Karl, Yih Wang, Yong-Gee Ng, Zheng Guo, Fatih Hamzaoglu, Mesut Meterelliyoz, John Keane, Uddalak Bhattacharya, Kevin Zhang, Kaizad Mistry, Mark Bohr
A 4.6 GHz 162 Mb SRAM Design in 22 nm Tri-Gate CMOS Technology With Integrated Read and Write Assist Circuitry. IEEE J. Solid State Circuits 48 (1) (2013)
Prashant Singh, Eric Karl, David T. Blaauw, Dennis Sylvester
Compact Degradation Sensors for Monitoring NBTI and Oxide Degradation. IEEE Trans. Very Large Scale Integr. Syst. 20 (9) (2012)
Eric Karl, Yih Wang, Yong-Gee Ng, Zheng Guo, Fatih Hamzaoglu, Uddalak Bhattacharya, Kevin Zhang, Kaizad Mistry, Mark Bohr
A 4.6GHz 162Mb SRAM design in 22nm tri-gate CMOS technology with integrated active VMIN-enhancing assist circuitry. ISSCC (2012)
Pramod Kolar, Eric Karl, Uddalak Bhattacharya, Fatih Hamzaoglu, Henry Nho, Yong-Gee Ng, Yih Wang, Kevin Zhang
A 32 nm High-k Metal Gate SRAM With Adaptive Dynamic Stability Enhancement for Low-Voltage Operation. IEEE J. Solid State Circuits 46 (1) (2011)
Prashant Singh, Eric Karl, Dennis Sylvester, David T. Blaauw
Dynamic NBTI Management Using a 45 nm Multi-Degradation Sensor. IEEE Trans. Circuits Syst. I Regul. Pap. (9) (2011)
Hyunwoo Nho, Pramod Kolar, Fatih Hamzaoglu, Yih Wang, Eric Karl, Yong-Gee Ng, Uddalak Bhattacharya, Kevin Zhang
A 32nm High-k metal gate SRAM with adaptive dynamic stability enhancement for low-voltage operation. ISSCC (2010)
Prashant Singh, Eric Karl, Dennis Sylvester, David T. Blaauw
Dynamic NBTI management using a 45nm multi-degradation sensor. CICC (2010)
Prashant Singh, Cheng Zhuo, Eric Karl, David T. Blaauw, Dennis Sylvester
Sensor-Driven Reliability and Wearout Management. IEEE Des. Test Comput. 26 (6) (2009)
Eric Karl, David T. Blaauw, Dennis Sylvester, Trevor N. Mudge
Multi-Mechanism Reliability Modeling and Management in Dynamic Systems. IEEE Trans. Very Large Scale Integr. Syst. 16 (4) (2008)
Eric Karl, Dennis Sylvester, David T. Blaauw
Analysis of System-Level Reliability Factors and Implications on Real-Time Monitoring Methods for Oxide Breakdown Device Failures. ISQED (2008)
Eric Karl, Prashant Singh, David T. Blaauw, Dennis Sylvester
Compact In-Situ Sensors for Monitoring Negative-Bias-Temperature-Instability Effect and Oxide Degradation. ISSCC (2008)
Eric Karl, David T. Blaauw, Dennis Sylvester, Trevor N. Mudge
Reliability modeling and management in dynamic microprocessor-based systems. DAC (2006)
Dennis Sylvester, David T. Blaauw, Eric Karl
ElastIC: An Adaptive Self-Healing Architecture for Unpredictable Silicon. IEEE Des. Test Comput. 23 (6) (2006)
Eric Karl, Dennis Sylvester, David T. Blaauw
Timing error correction techniques for voltage-scalable on-chip memories. ISCAS (4) (2005)