17.2 5.6Mb/mm2 1R1W 8T SRAM arrays operating down to 560mV utilizing small-signal sensing with charge-shared bitline and asymmetric sense amplifier in 14nm FinFET CMOS technology.
John KeaneJaydeep KulkarniKyung-Hoae KooSatyanand NalamZheng GuoEric KarlKevin ZhangPublished in: ISSCC (2016)
Keyphrases
- cmos technology
- low power
- image sensor
- power consumption
- low voltage
- spl times
- dynamic range
- parallel processing
- low cost
- high speed
- signal processing
- power dissipation
- computational complexity
- sensor networks
- mixed signal
- embedded dram
- transfer function
- motion vectors
- clock frequency
- silicon on insulator
- imaging systems
- super resolution