1R1W 8T SRAM Arrays Operating Down to 560 mV Utilizing Small-Signal Sensing With Charge Shared Bitline and Asymmetric Sense Amplifier in 14 nm FinFET CMOS Technology.
Jaydeep P. KulkarniJohn KeaneKyung-Hoae KooSatyanand NalamZheng GuoEric KarlKevin ZhangPublished in: IEEE J. Solid State Circuits (2017)