A 4.6 GHz 162 Mb SRAM Design in 22 nm Tri-Gate CMOS Technology With Integrated Read and Write Assist Circuitry.
Eric KarlYih WangYong-Gee NgZheng GuoFatih HamzaogluMesut MeterelliyozJohn KeaneUddalak BhattacharyaKevin ZhangKaizad MistryMark BohrPublished in: IEEE J. Solid State Circuits (2013)