Martin Gall

Publication Activity (10 Years)

Years Active: 1998-2024
Publications (10 Years): 9

Top Topics

Reliability Analysis

Top Venues

Microelectron. Reliab.

Publications

P. Srinivasan, Oscar H. Gonzalez, Oscar D. Restrepo, J. Lestage, Shafi Syed, W. Taylor, Anirban Bandyopadhyay, Martin Gall, S. Ludvik
Thermal Considerations on RF Reliability and Aging in SOI CMOS Based Power Amplifiers. IRPS (2024)
J. Shuster-Passage, S. Abdel Razek, M. Mattoo, Meike Hauschildt, Seungman Choi, Martin Gall, Armen Kteyan, Jun-Ho Choy, Valeriy Sukharev, Matthias Kraatz, J. R. Lloyd
A Novel Method for the Determination of Electromigration-Induced Void Nucleation Stresses. IRPS (2024)
P. Srinivasan, J. Lestage, Shafi Syed, X. Hui, Stephen Moss, Oscar D. Restrepo, Oscar H. Gonzalez, Y. Chen, T. McKay, Anirban Bandyopadhyay, Ned Cahoon, Fernando Guarin, Byoung Min, Martin Gall, S. Ludvik
RF long term aging behavior and reliability in 22FDX WiFi Power Amplifier designs for 5G applications. IRPS (2023)
Zhuo-Jie Wu, Ping-Chuan Wang, Seungman Choi, Patrick Justison, Martin Gall, Jae Kyu Cho, Takako Hirokawa, Yusheng Bian, Thomas Houghton, Vaishnavi Karra, Dan Moy, Karen Nummy, Dave Riggs, Norman Robson, Ian Melville, Ken Giewont
Self-aligned Fiber Attach on Monolithic Silicon Photonic Chips: Moisture Effect and Hermetic Seal. OFC (2023)
P. Srinivasan, Fernando Guarin, Shafi Syed, Joris Angelo Sundaram Jerome, Wen Liu, Sameer H. Jain, Dimitri Lederer, Stephen Moss, Paul Colestock, Anirban Bandyopadhyay, Ned Cahoon, Byoung Min, Martin Gall
RF Reliability of SOI-based Power Amplifier FETs for mmWave 5G Applications. IRPS (2021)
Zhenjun Zhang, Matthias Kraatz, Meike Hauschildt, Seungman Choi, André Clausner, Ehrenfried Zschech, Martin Gall
Strategy to Characterize Electromigration Short Length Effects in Cu/low-k Interconnects. IRPS (2021)
André Clausner, Simon Schlipf, Gottfried Kurz, Michael Otto, Jens Paul, Kay-Uwe Giering, Jens Warmuth, André Lange, Roland Jancke, Andreas Aal, Rüdiger Rosenkranz, Martin Gall, Ehrenfried Zschech
Analysis of 28 nm SRAM cell stability under mechanical load applied by nanoindentation. IRPS (2018)
Jens Warmuth, Kay-Uwe Giering, André Lange, André Clausner, Simon Schlipf, Gottfried Kurz, Michael Otto, Jens Paul, Roland Jancke, Andreas Aal, Martin Gall, Ehrenfried Zschech
Prediction of SRAM Reliability Under Mechanical Stress Induced by Harsh En§ironments. ESSDERC (2018)
M. Kraatz, Christoph Sander, André Clausner, M. Hauschildt, Yvonne Standke, Martin Gall, Ehrenfried Zschech
Analysis of electromigration-induced backflow stresses in Cu(Mn) interconnects using high statistical sampling. IRPS (2018)
Oliver Aubel, Armand Beyer, Georg Talut, Martin Gall
Empirical BEOL-TDDB evaluation based on I(t)-trace analysis. Microelectron. Reliab. 54 (9-10) (2014)
Christoph Sander, Yvonne Standke, Sven Niese, Rüdiger Rosenkranz, André Clausner, Martin Gall, Ehrenfried Zschech
Advanced methods for mechanical and structural characterization of nanoscale materials for 3D IC integration. Microelectron. Reliab. 54 (9-10) (2014)
Haldun Haznedar, Martin Gall, Vladimir Zolotov, Pon Sung Ku, Chanhee Oh, Rajendran Panda
Impact of stress-induced backflow on full-chip electromigration risk assessment. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 25 (6) (2006)
Chanhee Oh, Haldun Haznedar, Martin Gall, Amir Grinshpon, Vladimir Zolotov, Pon Sung Ku, Rajendran Panda
A Methodology for Chip-Level Electromigration Risk Assessment and Product Qualification. ISQED (2004)
Toshiaki Kirihata, Martin Gall, Kohji Hosokawa, Jean-Marc Dortu, Hing Wong, Peter Pfefferl, Brian L. Ji, Oliver Weinfurtner, John K. DeBrosse, Hartmud Terletzki, Manfred Selz, Wayne Ellis, Matthew R. Wordeman, Oliver Kiehl
, four- and eight-bank, 256-Mb SDRAM with single-sided stitched WL architecture. IEEE J. Solid State Circuits 33 (11) (1998)