Francesco Iannuzzo

Publication Activity (10 Years)

Years Active: 2001-2023
Publications (10 Years): 37

Top Topics

Light Emitting Diodes

Power Electronics

Experimental Study

Top Venues

Microelectron. Reliab.

IEEE Trans. Ind. Electron.

Publications

Rand AL Mdanat, Sarah Saeed, Ramy Georgious, Jorge García, Francesco Iannuzzo
Optimization of a Bidirectional Boost Converter for Nanogrid Applications. IAS (2023)
Cao Zhan, Lingyu Zhu, Weicheng Wang, Yaxin Zhang, Shengchang Ji, Francesco Iannuzzo
Multidimensional Mission-Profile-Based Lifetime Estimation Approach for IGBT Modules in MMC-HVdc Application Considering Bidirectional Power Transfer. IEEE Trans. Ind. Electron. 70 (7) (2023)
Qiang Wang, Jingwei Zhang, Francesco Iannuzzo, Amir Sajjad Bahman, Weifeng Zhang, Fengyou He
Improved Temperature Monitoring and Protection Method of Three-Level NPC Application Based on Half-Bridge IGBT Modules. IEEE Access 10 (2022)
Tomàs Lledó-Ponsati, Amir Sajjad Bahman, Francesco Iannuzzo, Daniel Montesinos-Miracle, Samuel Galceran-Arellano
Effect of Current Distortion and Unbalanced Loads on Semiconductors Reliability. IEEE Access 9 (2021)
Keting Hu, Zhigang Liu, Yongheng Yang, Francesco Iannuzzo, Frede Blaabjerg
Ensuring a Reliable Operation of Two-Level IGBT-Based Power Converters: A Review of Monitoring and Fault-Tolerant Approaches. IEEE Access 8 (2020)
Nick Baker, Francesco Iannuzzo
The Temperature Dependence of the Flatband Voltage in High-Power IGBTs. IEEE Trans. Ind. Electron. 66 (7) (2019)
Paula Diaz Reigosa, Francesco Iannuzzo, Lorenzo Ceccarelli
dielectric in SiC power MOSFETs. Microelectron. Reliab. (2018)
Mohsen Akbari, Amir Sajjad Bahman, Paula Diaz Reigosa, Francesco Iannuzzo, Mohammad Tavakoli Bina
Thermal modeling of wire-bonded power modules considering non-uniform temperature and electric current interactions. Microelectron. Reliab. (2018)
Mauro Ciappa, Paolo Cova, Gaudenzio Meneghesso, Francesco Iannuzzo
Editorial. Microelectron. Reliab. (2018)
H. Du, Paula Diaz Reigosa, Francesco Iannuzzo, Lorenzo Ceccarelli
Investigation on the degradation indicators of short-circuit tests in 1.2 kV SiC MOSFET power modules. Microelectron. Reliab. (2018)
P. Davari, O. Kristensen, Francesco Iannuzzo
Investigation of acoustic emission as a non-invasive method for detection of power semiconductor aging. Microelectron. Reliab. (2018)
Haoze Luo, Paula Diaz Reigosa, Francesco Iannuzzo, Frede Blaabjerg
On-line solder layer degradation measurement for SiC-MOSFET modules under accelerated power cycling condition. Microelectron. Reliab. (2018)
Haoze Luo, Wuhua Li, Francesco Iannuzzo, Xiangning He, Frede Blaabjerg
Enabling Junction Temperature Estimation via Collector-Side Thermo-Sensitive Electrical Parameters Through Emitter Stray Inductance in High-Power IGBT Modules. IEEE Trans. Ind. Electron. 65 (6) (2018)
Nick Baker, Francesco Iannuzzo
Smart SiC MOSFET accelerated lifetime testing. Microelectron. Reliab. (2018)
Amir Sajjad Bahman, S. M. Jensen, Francesco Iannuzzo
Failure mechanism analysis of fuses subjected to manufacturing and operational thermal stresses. Microelectron. Reliab. (2018)
Lorenzo Ceccarelli, Haoze Luo, Francesco Iannuzzo
Investigating SiC MOSFET body diode's light emission as temperature-sensitive electrical parameter. Microelectron. Reliab. (2018)
Keting Hu, Zhigang Liu, Francesco Iannuzzo, Frede Blaabjerg
Simple and effective open switch fault diagnosis of single-phase PWM rectifier. Microelectron. Reliab. (2018)
Uimin Choi, Søren Jørgensen, Francesco Iannuzzo, Frede Blaabjerg
Power cycling test of transfer molded IGBT modules by advanced power cycler under different junction temperature swings. Microelectron. Reliab. (2018)
Alessandro Soldati, Carlo Concari, Fabrizio Dossena, Davide Barater, Francesco Iannuzzo, Frede Blaabjerg
Active thermal control for reliability improvement of MOS-gated power devices. IECON (2017)
Lorenzo Ceccarelli, Paula Diaz Reigosa, Francesco Iannuzzo, Frede Blaabjerg
A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis. Microelectron. Reliab. (2017)
Haoze Luo, Wuhua Li, Xiangning He, Francesco Iannuzzo, Frede Blaabjerg
Uneven temperature effect evaluation in high-power IGBT inverter legs and relative test platform design. Microelectron. Reliab. (2017)
Uimin Choi, Frede Blaabjerg, Francesco Iannuzzo
Advanced power cycler with intelligent monitoring strategy of IGBT module under test. Microelectron. Reliab. (2017)
Amir Sajjad Bahman, Francesco Iannuzzo, T. Holmgaard, R. Ø. Nielsen, Frede Blaabjerg
Reliability-oriented environmental thermal stress analysis of fuses in power electronics. Microelectron. Reliab. (2017)
Haoze Luo, Francesco Iannuzzo, Frede Blaabjerg, Wuhua Li, Xiangning He
Separation test method for investigation of current density effects on bond wires of SiC power MOSFET modules. IECON (2017)
Lorenzo Ceccarelli, Paula Diaz Reigosa, Amir Sajjad Bahman, Francesco Iannuzzo, Frede Blaabjerg
Compact electro-thermal modeling of a SiC MOSFET power module under short-circuit conditions. IECON (2017)
Paula Diaz Reigosa, Francesco Iannuzzo, Munaf Rahimo, Frede Blaabjerg
Capacitive effects in IGBTs limiting their reliability under short circuit. Microelectron. Reliab. (2017)
Alessandro Soldati, Francesco Iannuzzo, Frede Blaabjerg
Active thermal control by controlled shoot-through of power devices. IECON (2017)
Haoze Luo, Nick Baker, Francesco Iannuzzo, Frede Blaabjerg
Die degradation effect on aging rate in accelerated cycling tests of SiC power MOSFET modules. Microelectron. Reliab. (2017)
Kristian Bonderup Pedersen, Dennis A. Nielsen, Bernhard Czerny, Golta Khatibi, Francesco Iannuzzo, Vladimir N. Popok, Kjeld Pedersen
Wire bond degradation under thermo- and pure mechanical loading. Microelectron. Reliab. (2017)
Amir Sajjad Bahman, Francesco Iannuzzo, Frede Blaabjerg
Mission-profile-based stress analysis of bond-wires in SiC power modules. Microelectron. Reliab. 64 (2016)
Paula Diaz Reigosa, D. Prindle, Gontran Pâques, Silvan Geissmann, Francesco Iannuzzo, Arnost Kopta, Munaf Rahimo
Comparison of thermal runaway limits under different test conditions based on a 4.5 kV IGBT. Microelectron. Reliab. 64 (2016)
Haoze Luo, Francesco Iannuzzo, Paula Diaz Reigosa, Frede Blaabjerg, Wuhua Li, Xiangning He
Modern IGBT gate driving methods for enhancing reliability of high-power converters - An overview. Microelectron. Reliab. 58 (2016)
Uimin Choi, Frede Blaabjerg, Søren Jørgensen, Francesco Iannuzzo, Huai Wang, Christian Uhrenfeldt, Stig Munk-Nielsen
Power cycling test and failure analysis of molded Intelligent Power IGBT Module under different temperature swing durations. Microelectron. Reliab. 64 (2016)
Francesco Iannuzzo, Mauro Ciappa
Reliability issues in power electronics. Microelectron. Reliab. 58 (2016)
Uimin Choi, Frede Blaabjerg, Francesco Iannuzzo, Søren Jørgensen
Junction temperature estimation method for a 600 V, 30A IGBT module during converter operation. Microelectron. Reliab. 55 (9-10) (2015)
Paula Diaz Reigosa, Rui Wu, Francesco Iannuzzo, Frede Blaabjerg
Robustness of MW-Level IGBT modules against gate oscillations under short circuit events. Microelectron. Reliab. 55 (9-10) (2015)
Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo, S. Mattiazzo, Annunziata Sanseverino, L. Silvestrin, D. Tedesco, Francesco Velardi
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT. Microelectron. Reliab. 55 (9-10) (2015)
Carmine Abbate, Francesco Iannuzzo, Giovanni Busatto, Annunziata Sanseverino, Francesco Velardi, Cesare Ronsisvalle, James Victory
Turn-off instabilities in large area IGBTs. Microelectron. Reliab. 54 (9-10) (2014)
Rui Wu, Liudmila Smirnova, Francesco Iannuzzo, Huai Wang, Frede Blaabjerg
Investigation on the short-circuit behavior of an aged IGBT module through a 6 kA/1.1 kV non-destructive testing equipment. IECON (2014)
Carmine Abbate, Giovanni Busatto, Paolo Cova, Nicola Delmonte, Francesco Giuliani, Francesco Iannuzzo, Annunziata Sanseverino, Francesco Velardi
Thermal damage in SiC Schottky diodes induced by SE heavy ions. Microelectron. Reliab. 54 (9-10) (2014)
Carmine Abbate, Francesco Iannuzzo, Giovanni Busatto
Thermal instability during short circuit of normally-off AlGaN/GaN HFETs. Microelectron. Reliab. 53 (9-11) (2013)
Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo, Cesare Ronsisvalle, Annunziata Sanseverino, Francesco Velardi
Scattering parameter approach applied to the stability analysis of power IGBTs in short circuit. Microelectron. Reliab. 53 (9-11) (2013)
Rui Wu, Frede Blaabjerg, Huai Wang, Marco Liserre, Francesco Iannuzzo
Catastrophic failure and fault-tolerant design of IGBT power electronic converters - an overview. IECON (2013)
Mauro Ciappa, Paolo Cova, Francesco Iannuzzo, Gaudenzio Meneghesso
Editorial. Microelectron. Reliab. 52 (9-10) (2012)
Stefania Baccaro, Giovanni Busatto, Mauro Citterio, Paolo Cova, Nicola Delmonte, Francesco Iannuzzo, Agostino Lanza, Marco Riva, Annunziata Sanseverino, Giorgio Spiazzi
Reliability oriented design of power supplies for high energy physics applications. Microelectron. Reliab. 52 (9-10) (2012)
Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo
Unclamped repetitive stress on 1200 V normally-off SiC JFETs. Microelectron. Reliab. 52 (9-10) (2012)
Giovanni Busatto, Valentina De Luca, Francesco Iannuzzo, Annunziata Sanseverino, Francesco Velardi
Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure. Microelectron. Reliab. 52 (9-10) (2012)
Giovanni Busatto, D. Bisello, Giuseppe Currò, Piero Giubilato, Francesco Iannuzzo, S. Mattiazzo, D. Pantano, Annunziata Sanseverino, L. Silvestrin, M. Tessaro, Francesco Velardi, Jeffery Wyss
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs. Microelectron. Reliab. 51 (9-11) (2011)
Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo
Operation of SiC normally-off JFET at the edges of its safe operating area. Microelectron. Reliab. 51 (9-11) (2011)
Giovanni Busatto, Giuseppe Currò, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi
Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET. Microelectron. Reliab. 50 (9-11) (2010)
Giovanni Busatto, Francesco Iannuzzo
Editorial. Microelectron. Reliab. 50 (9-11) (2010)
Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo
IGBT RBSOA non-destructive testing methods: Analysis and discussion. Microelectron. Reliab. 50 (9-11) (2010)
Giovanni Busatto, Carmine Abbate, Francesco Iannuzzo, P. Cristofaro
Instable mechanisms during unclamped operation of high power IGBT modules. Microelectron. Reliab. 49 (9-11) (2009)
Giovanni Busatto, Giuseppe Currò, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi
Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions. Microelectron. Reliab. 49 (9-11) (2009)
Francesco Iannuzzo
High performance, FPGA-based test apparatus for unclamped inductive switching of IGBTs. Microelectron. Reliab. 48 (8-9) (2008)
Francesco Iannuzzo
Race-Control Algorithm for the Full-Bridge PRCP Converter Using Cost-Effective FPGAs. IEEE Trans. Ind. Electron. 55 (4) (2008)
Giovanni Busatto, Carmine Abbate, B. Abbate, Francesco Iannuzzo
IGBT modules robustness during turn-off commutation. Microelectron. Reliab. 48 (8-9) (2008)
Giovanni Busatto, Giuseppe Currò, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi
Experimental evidence of "latent gate oxide damages" in medium voltage power MOSFET as a result of heavy ions exposure. Microelectron. Reliab. 48 (8-9) (2008)
Carmine Abbate, Giovanni Busatto, Luigi Fratelli, Francesco Iannuzzo, B. Cascone, Roberta Manzo
The robustness of series-connected high power IGBT modules. Microelectron. Reliab. 47 (9-11) (2007)
Carmine Abbate, Giovanni Busatto, Luigi Fratelli, Francesco Iannuzzo
The high frequency behaviour of high voltage and current IGBT modules. Microelectron. Reliab. 46 (9-11) (2006)
Francesco Iannuzzo, Giovanni Busatto, Carmine Abbate
Investigation of MOSFET failure in soft-switching conditions. Microelectron. Reliab. 46 (9-11) (2006)
Giovanni Busatto, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi, Giuseppe Currò
Experimental study of power MOSFET's gate damage in radiation environment. Microelectron. Reliab. 46 (9-11) (2006)
Giovanni Busatto, Alberto Porzio, Francesco Velardi, Francesco Iannuzzo, Annunziata Sanseverino, Giuseppe Currò
Experimental and Numerical investigation about SEB/SEGR of Power MOSFET. Microelectron. Reliab. 45 (9-11) (2005)
Francesco Iannuzzo
Non-destructive Testing Technique for MOSFET's Characterisation during Soft-Switching ZVS Operations. Microelectron. Reliab. 45 (9-11) (2005)
Francesco Velardi, Francesco Iannuzzo, Giovanni Busatto, Alberto Porzio, Annunziata Sanseverino, Giuseppe Currò, Alessandra Cascio, Ferruccio Frisina
The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure. Microelectron. Reliab. 44 (9-11) (2004)
Giovanni Busatto, Luigi Fratelli, Carmine Abbate, Roberta Manzo, Francesco Iannuzzo
Analysis and optimisation through innovative driving strategy of high power IGBT performances/EMI reduction trade-off for converter systems in railway applications. Microelectron. Reliab. 44 (9-11) (2004)
Giovanni Busatto, Francesco Iannuzzo, Francesco Velardi, M. Valentino, G. P. Pepe
Non-Destructive Detection of Current Distribution in Power Modules based on Pulsed Magnetic Measurement. Microelectron. Reliab. 43 (9-11) (2003)
Francesco Velardi, Francesco Iannuzzo, Giovanni Busatto, Jeffery Wyss, Annunziata Sanseverino, A. Candelori, Giuseppe Currò, Alessandra Cascio, Ferruccio Frisina
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment. Microelectron. Reliab. 43 (9-11) (2003)
Francesco Velardi, Francesco Iannuzzo, Giovanni Busatto, Jeffery Wyss, A. Candelori
. Microelectron. Reliab. 43 (4) (2003)
Giovanni Busatto, Roberto La Capruccia, Francesco Iannuzzo, Francesco Velardi, Roberto Roncella
MAGFET based current sensing for power integrated circuit. Microelectron. Reliab. 43 (4) (2003)
Giovanni Busatto, B. Cascone, Luigi Fratelli, M. Balsamo, Francesco Iannuzzo, Francesco Velardi
Non-destructive high temperature characterisation of high-voltage IGBTs. Microelectron. Reliab. 42 (9-11) (2002)
Francesco Velardi, Francesco Iannuzzo, Giovanni Busatto, Jeffery Wyss, A. Kaminksy
The Reliability of New Generation Power MOSFETs in Radiation Environment. Microelectron. Reliab. 42 (9-11) (2002)
Giovanni Busatto, Francesco Iannuzzo, Francesco Velardi, Jeffery Wyss
Non-destructive tester for single event burnout of power diodes. Microelectron. Reliab. 41 (9-10) (2001)