Christian Uhrenfeldt

Publication Activity (10 Years)

Years Active: 2016-2022
Publications (10 Years): 8

Top Topics

Figure Of Merit

Top Venues

Microelectron. Reliab.

IEEE Trans. Instrum. Meas.

IEEE Trans. Ind. Electron.

Publications

Hongbo Zhao, Zhan Shen, Dipen Narendra Dalal, Asger Bjørn Jørgensen, Xiongfei Wang, Stig Munk-Nielsen, Christian Uhrenfeldt
Parasitic Capacitance Modeling of Inductors Without Using the Floating Voltage Potential of Core. IEEE Trans. Ind. Electron. 69 (3) (2022)
Bjørn Rannestad, Stig Munk-Nielsen, Kristian Gadgaard, Christian Uhrenfeldt
Statistical Method of Estimating Semiconductor Switching Transition Time Enabling Condition Monitoring of Megawatt Converters. IEEE Trans. Instrum. Meas. 69 (6) (2020)
Hongbo Zhao, Dipen Narendra Dalal, Xiongfei Wang, Jannick Kjær Jørgensen, Christian Uhrenfeldt, Szymon Beczkowski, Stig Munk-Nielsen
Modeling and Design of a 1.2 pF Common-Mode Capacitance Transformer for Powering MV SiC MOSFETs Gate Drivers. IECON (2019)
Thore Stig Aunsborg, Sune Bro Duun, Christian Uhrenfeldt, Stig Munk-Nielsen
Challenges and opportunities in the utilization of WBG devices for efficient MHz power generation. IECON (2019)
Christian Uhrenfeldt, Stig Munk-Nielsen, Szymon Beczkowski
Frequency domain scanning acoustic microscopy for power electronics: Physics-based feature identification and selectivity. Microelectron. Reliab. (2018)
Sungyoung Song, Stig Munk-Nielsen, Christian Uhrenfeldt
Failure mechanism analysis of off-state drain-to-source leakage current failure of a commercial 650 V discrete GaN-on-Si HEMT power device by accelerated power cycling test. Microelectron. Reliab. (2017)
Uimin Choi, Frede Blaabjerg, Søren Jørgensen, Francesco Iannuzzo, Huai Wang, Christian Uhrenfeldt, Stig Munk-Nielsen
Power cycling test and failure analysis of molded Intelligent Power IGBT Module under different temperature swing durations. Microelectron. Reliab. 64 (2016)
Sungyoung Song, Stig Munk-Nielsen, Christian Uhrenfeldt, Ionut Trintis
Performance assessment of commercial gallium nitride-on-silicon discrete power devices with figure of merit. IECON (2016)