Giuseppe Currò

Publication Activity (10 Years)

Years Active: 2002-2011
Publications (10 Years): 0

Publications

Giovanni Busatto, D. Bisello, Giuseppe Currò, Piero Giubilato, Francesco Iannuzzo, S. Mattiazzo, D. Pantano, Annunziata Sanseverino, L. Silvestrin, M. Tessaro, Francesco Velardi, Jeffery Wyss
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs. Microelectron. Reliab. 51 (9-11) (2011)
Giovanni Busatto, Giuseppe Currò, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi
Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET. Microelectron. Reliab. 50 (9-11) (2010)
Giovanni Busatto, Giuseppe Currò, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi
Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions. Microelectron. Reliab. 49 (9-11) (2009)
Giovanni Busatto, Giuseppe Currò, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi
Experimental evidence of "latent gate oxide damages" in medium voltage power MOSFET as a result of heavy ions exposure. Microelectron. Reliab. 48 (8-9) (2008)
Francesca Monforte, Marco Camalleri, Denise Calì, Giuseppe Currò, Enza Fazio, Fortunato Neri
gate. Microelectron. Reliab. 47 (4-5) (2007)
Alessandra Cascio, Giuseppe Currò, A. Cavagnoli
in PowerMOSFET devices. Microelectron. Reliab. 47 (4-5) (2007)
Giuseppe Currò, Marco Camalleri, Denise Calì, Francesca Monforte, Fortunato Neri
O-grown oxynitride/oxide di-layer for PowerMOSFET devices. Microelectron. Reliab. 47 (4-5) (2007)
Giacomo Barletta, Giuseppe Currò
Evaluation of the generation mechanisms at surface and in the bulk of the silicon by current transient technique. Microelectron. Reliab. 47 (4-5) (2007)
Giuseppe Currò, Marco Camalleri, Denise Calì, Francesca Monforte, Fortunato Neri
O-grown oxynitride/oxide di-layer for PowerMOSFET devices. Microelectron. Reliab. 47 (4-5) (2007)
Giovanni Busatto, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi, Giuseppe Currò
Experimental study of power MOSFET's gate damage in radiation environment. Microelectron. Reliab. 46 (9-11) (2006)
Giacomo Barletta, Giuseppe Currò
Junction leakage current degradation under high temperature reverse-bias stress induced by band-defect-band tunnelling in power VDMOS. Microelectron. Reliab. 45 (5-6) (2005)
Giovanni Busatto, Alberto Porzio, Francesco Velardi, Francesco Iannuzzo, Annunziata Sanseverino, Giuseppe Currò
Experimental and Numerical investigation about SEB/SEGR of Power MOSFET. Microelectron. Reliab. 45 (9-11) (2005)
Francesco Velardi, Francesco Iannuzzo, Giovanni Busatto, Alberto Porzio, Annunziata Sanseverino, Giuseppe Currò, Alessandra Cascio, Ferruccio Frisina
The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure. Microelectron. Reliab. 44 (9-11) (2004)
Francesco Velardi, Francesco Iannuzzo, Giovanni Busatto, Jeffery Wyss, Annunziata Sanseverino, A. Candelori, Giuseppe Currò, Alessandra Cascio, Ferruccio Frisina
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment. Microelectron. Reliab. 43 (9-11) (2003)
Giuseppe Currò, R. Greco, Antonino Scandurra
Growth process and chemical characterization of an ultrathin phosphate film grafted onto Al-alloy metallization surfaces relevant to microelectronic devices reliability. Microelectron. Reliab. 42 (9-11) (2002)