Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions.
Giovanni BusattoGiuseppe CurròFrancesco IannuzzoAlberto PorzioAnnunziata SanseverinoFrancesco VelardiPublished in: Microelectron. Reliab. (2009)
Keyphrases
- experimental study
- metal oxide
- leakage current
- silicon dioxide
- field effect transistors
- short circuit
- x ray
- low voltage
- high speed
- transmission line
- si sio
- experimental evaluation
- solid state
- multiple input
- electrical properties
- defect detection
- room temperature
- fuel cell
- damage assessment
- power supply
- power line
- computer vision