Annunziata Sanseverino

Publication Activity (10 Years)

Years Active: 2003-2018
Publications (10 Years): 4

Top Topics

Ionizing Radiation

Subband Decomposition

Experimental Study

Top Venues

Microelectron. Reliab.

Publications

Carmine Abbate, Giovanni Busatto, S. Mattiazzo, Annunziata Sanseverino, L. Silvestrin, D. Tedesco, Francesco Velardi
Progressive drain damage in SiC power MOSFETs exposed to ionizing radiation. Microelectron. Reliab. (2018)
Carmine Abbate, Giovanni Busatto, Annunziata Sanseverino, D. Tedesco, Francesco Velardi
Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests. Microelectron. Reliab. (2018)
Carmine Abbate, Giovanni Busatto, Annunziata Sanseverino, D. Tedesco, Francesco Velardi
Measure of high frequency input impedance to study the instability of power devices in short circuit. Microelectron. Reliab. (2018)
Carmine Abbate, Giovanni Busatto, Annunziata Sanseverino, D. Tedesco, Francesco Velardi
Experimental study of the instabilities observed in 650 V enhancement mode GaN HEMT during short circuit. Microelectron. Reliab. (2017)
Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo, S. Mattiazzo, Annunziata Sanseverino, L. Silvestrin, D. Tedesco, Francesco Velardi
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT. Microelectron. Reliab. 55 (9-10) (2015)
Carmine Abbate, Francesco Iannuzzo, Giovanni Busatto, Annunziata Sanseverino, Francesco Velardi, Cesare Ronsisvalle, James Victory
Turn-off instabilities in large area IGBTs. Microelectron. Reliab. 54 (9-10) (2014)
Carmine Abbate, Giovanni Busatto, Paolo Cova, Nicola Delmonte, Francesco Giuliani, Francesco Iannuzzo, Annunziata Sanseverino, Francesco Velardi
Thermal damage in SiC Schottky diodes induced by SE heavy ions. Microelectron. Reliab. 54 (9-10) (2014)
Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo, Cesare Ronsisvalle, Annunziata Sanseverino, Francesco Velardi
Scattering parameter approach applied to the stability analysis of power IGBTs in short circuit. Microelectron. Reliab. 53 (9-11) (2013)
Stefania Baccaro, Giovanni Busatto, Mauro Citterio, Paolo Cova, Nicola Delmonte, Francesco Iannuzzo, Agostino Lanza, Marco Riva, Annunziata Sanseverino, Giorgio Spiazzi
Reliability oriented design of power supplies for high energy physics applications. Microelectron. Reliab. 52 (9-10) (2012)
Giovanni Busatto, Valentina De Luca, Francesco Iannuzzo, Annunziata Sanseverino, Francesco Velardi
Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure. Microelectron. Reliab. 52 (9-10) (2012)
Giovanni Busatto, D. Bisello, Giuseppe Currò, Piero Giubilato, Francesco Iannuzzo, S. Mattiazzo, D. Pantano, Annunziata Sanseverino, L. Silvestrin, M. Tessaro, Francesco Velardi, Jeffery Wyss
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs. Microelectron. Reliab. 51 (9-11) (2011)
Giovanni Busatto, Giuseppe Currò, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi
Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET. Microelectron. Reliab. 50 (9-11) (2010)
Giovanni Busatto, Giuseppe Currò, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi
Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions. Microelectron. Reliab. 49 (9-11) (2009)
Giovanni Busatto, Giuseppe Currò, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi
Experimental evidence of "latent gate oxide damages" in medium voltage power MOSFET as a result of heavy ions exposure. Microelectron. Reliab. 48 (8-9) (2008)
Giovanni Busatto, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi, Giuseppe Currò
Experimental study of power MOSFET's gate damage in radiation environment. Microelectron. Reliab. 46 (9-11) (2006)
Giovanni Busatto, Alberto Porzio, Francesco Velardi, Francesco Iannuzzo, Annunziata Sanseverino, Giuseppe Currò
Experimental and Numerical investigation about SEB/SEGR of Power MOSFET. Microelectron. Reliab. 45 (9-11) (2005)
Francesco Velardi, Francesco Iannuzzo, Giovanni Busatto, Alberto Porzio, Annunziata Sanseverino, Giuseppe Currò, Alessandra Cascio, Ferruccio Frisina
The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure. Microelectron. Reliab. 44 (9-11) (2004)
Francesco Velardi, Francesco Iannuzzo, Giovanni Busatto, Jeffery Wyss, Annunziata Sanseverino, A. Candelori, Giuseppe Currò, Alessandra Cascio, Ferruccio Frisina
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment. Microelectron. Reliab. 43 (9-11) (2003)