Carmine Abbate

Publication Activity (10 Years)

Years Active: 2004-2018
Publications (10 Years): 5

Top Topics

Subband Decomposition

Experimental Study

High Frequencies

Top Venues

Microelectron. Reliab.

Publications

Carmine Abbate, Giovanni Busatto, S. Mattiazzo, Annunziata Sanseverino, L. Silvestrin, D. Tedesco, Francesco Velardi
Progressive drain damage in SiC power MOSFETs exposed to ionizing radiation. Microelectron. Reliab. (2018)
Carmine Abbate, Giovanni Busatto, Annunziata Sanseverino, D. Tedesco, Francesco Velardi
Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests. Microelectron. Reliab. (2018)
Carmine Abbate, Giovanni Busatto, Annunziata Sanseverino, D. Tedesco, Francesco Velardi
Measure of high frequency input impedance to study the instability of power devices in short circuit. Microelectron. Reliab. (2018)
Carmine Abbate, Giovanni Busatto, Annunziata Sanseverino, D. Tedesco, Francesco Velardi
Experimental study of the instabilities observed in 650 V enhancement mode GaN HEMT during short circuit. Microelectron. Reliab. (2017)
Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo, S. Mattiazzo, Annunziata Sanseverino, L. Silvestrin, D. Tedesco, Francesco Velardi
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT. Microelectron. Reliab. 55 (9-10) (2015)
Carmine Abbate, Francesco Iannuzzo, Giovanni Busatto, Annunziata Sanseverino, Francesco Velardi, Cesare Ronsisvalle, James Victory
Turn-off instabilities in large area IGBTs. Microelectron. Reliab. 54 (9-10) (2014)
Carmine Abbate, Giovanni Busatto, Paolo Cova, Nicola Delmonte, Francesco Giuliani, Francesco Iannuzzo, Annunziata Sanseverino, Francesco Velardi
Thermal damage in SiC Schottky diodes induced by SE heavy ions. Microelectron. Reliab. 54 (9-10) (2014)
Carmine Abbate, Francesco Iannuzzo, Giovanni Busatto
Thermal instability during short circuit of normally-off AlGaN/GaN HFETs. Microelectron. Reliab. 53 (9-11) (2013)
Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo, Cesare Ronsisvalle, Annunziata Sanseverino, Francesco Velardi
Scattering parameter approach applied to the stability analysis of power IGBTs in short circuit. Microelectron. Reliab. 53 (9-11) (2013)
Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo
Unclamped repetitive stress on 1200 V normally-off SiC JFETs. Microelectron. Reliab. 52 (9-10) (2012)
Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo
Operation of SiC normally-off JFET at the edges of its safe operating area. Microelectron. Reliab. 51 (9-11) (2011)
Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo
IGBT RBSOA non-destructive testing methods: Analysis and discussion. Microelectron. Reliab. 50 (9-11) (2010)
Giovanni Busatto, Carmine Abbate, Francesco Iannuzzo, P. Cristofaro
Instable mechanisms during unclamped operation of high power IGBT modules. Microelectron. Reliab. 49 (9-11) (2009)
Giovanni Busatto, Carmine Abbate, B. Abbate, Francesco Iannuzzo
IGBT modules robustness during turn-off commutation. Microelectron. Reliab. 48 (8-9) (2008)
Carmine Abbate, Giovanni Busatto, Luigi Fratelli, Francesco Iannuzzo, B. Cascone, Roberta Manzo
The robustness of series-connected high power IGBT modules. Microelectron. Reliab. 47 (9-11) (2007)
Carmine Abbate, Giovanni Busatto, Luigi Fratelli, Francesco Iannuzzo
The high frequency behaviour of high voltage and current IGBT modules. Microelectron. Reliab. 46 (9-11) (2006)
Francesco Iannuzzo, Giovanni Busatto, Carmine Abbate
Investigation of MOSFET failure in soft-switching conditions. Microelectron. Reliab. 46 (9-11) (2006)
Giovanni Busatto, Luigi Fratelli, Carmine Abbate, Roberta Manzo, Francesco Iannuzzo
Analysis and optimisation through innovative driving strategy of high power IGBT performances/EMI reduction trade-off for converter systems in railway applications. Microelectron. Reliab. 44 (9-11) (2004)