The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure.
Francesco VelardiFrancesco IannuzzoGiovanni BusattoAlberto PorzioAnnunziata SanseverinoGiuseppe CurròAlessandra CascioFerruccio FrisinaPublished in: Microelectron. Reliab. (2004)