Alberto Porzio

Publication Activity (10 Years)

Years Active: 2004-2019
Publications (10 Years): 1

Top Topics

Continuous Variables

Bayesian Networks

Top Venues

Publications

Alberto Porzio, Adriana Pecoraro, Filippo Cardano, Lorenzo Marrucci
Continuous Variable Entanglement over Different Degree of Freedom for Entanglement Multiplexing. ICTON (2019)
Giovanni Busatto, Giuseppe Currò, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi
Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET. Microelectron. Reliab. 50 (9-11) (2010)
Giovanni Busatto, Giuseppe Currò, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi
Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions. Microelectron. Reliab. 49 (9-11) (2009)
Giovanni Busatto, Giuseppe Currò, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi
Experimental evidence of "latent gate oxide damages" in medium voltage power MOSFET as a result of heavy ions exposure. Microelectron. Reliab. 48 (8-9) (2008)
Giovanni Busatto, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi, Giuseppe Currò
Experimental study of power MOSFET's gate damage in radiation environment. Microelectron. Reliab. 46 (9-11) (2006)
Giovanni Busatto, Alberto Porzio, Francesco Velardi, Francesco Iannuzzo, Annunziata Sanseverino, Giuseppe Currò
Experimental and Numerical investigation about SEB/SEGR of Power MOSFET. Microelectron. Reliab. 45 (9-11) (2005)
Francesco Velardi, Francesco Iannuzzo, Giovanni Busatto, Alberto Porzio, Annunziata Sanseverino, Giuseppe Currò, Alessandra Cascio, Ferruccio Frisina
The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure. Microelectron. Reliab. 44 (9-11) (2004)