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Experimental evidence of "latent gate oxide damages" in medium voltage power MOSFET as a result of heavy ions exposure.

Giovanni BusattoGiuseppe CurròFrancesco IannuzzoAlberto PorzioAnnunziata SanseverinoFrancesco Velardi
Published in: Microelectron. Reliab. (2008)
Keyphrases
  • silicon dioxide
  • field effect transistors
  • room temperature
  • power consumption
  • power management
  • power losses
  • power system
  • latent variables
  • electrical properties
  • duty cycle