Win-San Khwa

Publication Activity (10 Years)

Years Active: 2016-2024
Publications (10 Years): 37

Top Topics

Memory Requirements

Recommendation Systems

Language Understanding

Top Venues

IEEE J. Solid State Circuits

VLSI Technology and Circuits

Publications

Hung-Hsi Hsu, Tai-Hao Wen, Wei-Hsing Huang, Win-San Khwa, Yun-Chen Lo, Chuan-Jia Jhang, Yu-Hsiang Chin, Yu-Chiao Chen, Chung-Chuan Lo, Ren-Shuo Liu, Kea-Tiong Tang, Chih-Cheng Hsieh, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang
A Nonvolatile AI-Edge Processor With SLC-MLC Hybrid ReRAM Compute-in-Memory Macro Using Current-Voltage-Hybrid Readout Scheme. IEEE J. Solid State Circuits 59 (1) (2024)
Tai-Hao Wen, Hung-Hsi Hsu, Win-San Khwa, Wei-Hsing Huang, Zhao-En Ke, Yu-Hsiang Chin, Hua-Jin Wen, Yu-Chen Chang, Wei-Ting Hsu, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Shih-Hsih Teng, Chung-Cheng Chou, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang
34.8 A 22nm 16Mb Floating-Point ReRAM Compute-in-Memory Macro with 31.2TFLOPS/W for AI Edge Devices. ISSCC (2024)
De-Qi You, Yen-Cheng Chiu, Win-San Khwa, Chung-Yuan Li, Fang-Ling Hsieh, Yu-An Chien, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang
An 8b-Precision 8-Mb STT-MRAM Near-Memory-Compute Macro Using Weight-Feature and Input-Sparsity Aware Schemes for Energy-Efficient Edge AI Devices. IEEE J. Solid State Circuits 59 (1) (2024)
Ashwin Sanjay Lele, Muya Chang, Samuel D. Spetalnick, Brian Crafton, Shota Konno, Zishen Wan, Ashwin Bhat, Win-San Khwa, Yu-Der Chih, Meng-Fan Chang, Arijit Raychowdhury
A Heterogeneous RRAM In-Memory and SRAM Near-Memory SoC for Fused Frame and Event-Based Target Identification and Tracking. IEEE J. Solid State Circuits 59 (1) (2024)
Win-San Khwa, Ping-Chun Wu, Jui-Jen Wu, Jian-Wei Su, Ho-Yu Chen, Zhao-En Ke, Ting-Chien Chiu, Jun-Ming Hsu, Chiao-Yen Cheng, Yu-Chen Chen, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Meng-Fan Chang
34.2 A 16nm 96Kb Integer/Floating-Point Dual-Mode-Gain-Cell-Computing-in-Memory Macro Achieving 73.3-163.3TOPS/W and 33.2-91.2TFLOPS/W for AI-Edge Devices. ISSCC (2024)
Akash Levy, Luke R. Upton, Michael D. Scott, Dennis Rich, Win-San Khwa, Yu-Der Chih, Meng-Fan Chang, Subhasish Mitra, Boris Murmann, Priyanka Raina
EMBER: Efficient Multiple-Bits-Per-Cell Embedded RRAM Macro for High-Density Digital Storage. IEEE J. Solid State Circuits 59 (7) (2024)
Samuel D. Spetalnick, Ashwin Sanjay Lele, Brian Crafton, Muya Chang, Sigang Ryu, Jong-Hyeok Yoon, Zhijian Hao, Azadeh Ansari, Win-San Khwa, Yu-Der Chih, Meng-Fan Chang, Arijit Raychowdhury
30.1 A 40nm VLIW Edge Accelerator with 5MB of 0.256pJ/b RRAM and a Localization Solver for Bristle Robot Surveillance. ISSCC (2024)
Tai-Hao Wen, Je-Min Hung, Hung-Hsi Hsu, Yuan Wu, Fu-Chun Chang, Chung-Yuan Li, Chih-Han Chien, Chin-I Su, Win-San Khwa, Jui-Jen Wu, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Mon-Shu Ho, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang
A 28nm Nonvolatile AI Edge Processor using 4Mb Analog-Based Near-Memory-Compute ReRAM with 27.2 TOPS/W for Tiny AI Edge Devices. VLSI Technology and Circuits (2023)
Je-Min Hung, Tai-Hao Wen, Yen-Hsiang Huang, Sheng-Po Huang, Fu-Chun Chang, Chin-I Su, Win-San Khwa, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang
8-b Precision 8-Mb ReRAM Compute-in-Memory Macro Using Direct-Current-Free Time-Domain Readout Scheme for AI Edge Devices. IEEE J. Solid State Circuits 58 (1) (2023)
Samuel D. Spetalnick, Muya Chang, Shota Konno, Brian Crafton, Ashwin Sanjay Lele, Win-San Khwa, Yu-Der Chih, Meng-Fan Chang, Arijit Raychowdhury
9.81 -350 TOPS/W RRAM Compute-in-Memory Macro in 40nm CMOS with Hybrid Offset/IOFF Cancellation and ICELL RBLSL Drop Mitigation. VLSI Technology and Circuits (2023)
Wei-Hsing Huang, Tai-Hao Wen, Je-Min Hung, Win-San Khwa, Yun-Chen Lo, Chuan-Jia Jhang, Huna-Hsi Hsu, Yu-Hsiana Chin, Yu-Chiao Chen, Chuna-Chuan Lo, Ren-Shuo Liu, Kea-Tiong Tang, Chih-Cheng Hsieh, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang
A Nonvolatile Al-Edge Processor with 4MB SLC-MLC Hybrid-Mode ReRAM Compute-in-Memory Macro and 51.4-251TOPS/W. ISSCC (2023)
Muya Chang, Ashwin Sanjay Lele, Samuel D. Spetalnick, Brian Crafton, Shota Konno, Zishen Wan, Ashwin Bhat, Win-San Khwa, Yu-Der Chih, Meng-Fan Chang, Arijit Raychowdhury
A 73.53TOPS/W 14.74TOPS Heterogeneous RRAM In-Memory and SRAM Near-Memory SoC for Hybrid Frame and Event-Based Target Tracking. ISSCC (2023)
Zexi Ji, Hanrui Wang, Miaorong Wang, Win-San Khwa, Meng-Fan Chang, Song Han, Anantha P. Chandrakasan
A Fully-Integrated Energy-Scalable Transformer Accelerator Supporting Adaptive Model Configuration and Word Elimination for Language Understanding on Edge Devices. ISLPED (2023)
Luke R. Upton, Akash Levy, Michael D. Scott, Dennis Rich, Win-San Khwa, Yu-Der Chih, Meng-Fan Chang, Subhasish Mitra, Priyanka Raina, Boris Murmann
, Multiple-Bits-per-Cell RRAM Macro in 40 nm CMOS with Compact Peripherals and 1.0 pJ/bit Read Circuitry. ESSCIRC (2023)
Yen-Cheng Chiu, Win-San Khwa, Chung-Yuan Li, Fang-Ling Hsieh, Yu-An Chien, Guan-Yi Lin, Po-Jung Chen, Tsen-Hsiang Pan, De-Qi You, Fang-Yi Chen, Andrew Lee, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang
A 22nm 8Mb STT-MRAM Near-Memory-Computing Macro with 8b-Precision and 46.4-160.1TOPS/W for Edge-AI Devices. ISSCC (2023)
Kartik Prabhu, Albert Gural, Zainab F. Khan, Robert M. Radway, Massimo Giordano, Kalhan Koul, Rohan Doshi, John W. Kustin, Timothy Liu, Gregorio B. Lopes, Victor Turbiner, Win-San Khwa, Yu-Der Chih, Meng-Fan Chang, Guénolé Lallement, Boris Murmann, Subhasish Mitra, Priyanka Raina
CHIMERA: A 0.92-TOPS, 2.2-TOPS/W Edge AI Accelerator With 2-MByte On-Chip Foundry Resistive RAM for Efficient Training and Inference. IEEE J. Solid State Circuits 57 (4) (2022)
Samuel D. Spetalnick, Muya Chang, Brian Crafton, Win-San Khwa, Yu-Der Chih, Meng-Fan Chang, Arijit Raychowdhury
RRAM Binary/Compute-in-Memory Macro with 4.23x Improvement in Density and >75% Use of Sensing Dynamic Range. ISSCC (2022)
Jong-Hyeok Yoon, Muya Chang, Win-San Khwa, Yu-Der Chih, Meng-Fan Chang, Arijit Raychowdhury
A 40-nm, 64-Kb, 56.67 TOPS/W Voltage-Sensing Computing-In-Memory/Digital RRAM Macro Supporting Iterative Write With Verification and Online Read-Disturb Detection. IEEE J. Solid State Circuits 57 (1) (2022)
Win-San Khwa, Yen-Cheng Chiu, Chuan-Jia Jhang, Sheng-Po Huang, Chun-Ying Lee, Tai-Hao Wen, Fu-Chun Chang, Shao-Ming Yu, Tung-Yin Lee, Meng-Fan Chang
A 40-nm, 2M-Cell, 8b-Precision, Hybrid SLC-MLC PCM Computing-in-Memory Macro with 20.5 - 65.0TOPS/W for Tiny-Al Edge Devices. ISSCC (2022)
Xin Zheng, Ryan Zarcone, Akash Levy, Win-San Khwa, Priyanka Raina, Bruno A. Olshausen, H.-S. Philip Wong
High-density analog image storage in an analog-valued non-volatile memory array. Neuromorph. Comput. Eng. 2 (4) (2022)
Muya Chang, Samuel D. Spetalnick, Brian Crafton, Win-San Khwa, Yu-Der Chih, Meng-Fan Chang, Arijit Raychowdhury
A 40nm 60.64TOPS/W ECC-Capable Compute-in-Memory/Digital 2.25MB/768KB RRAM/SRAM System with Embedded Cortex M3 Microprocessor for Edge Recommendation Systems. ISSCC (2022)
Jong-Hyeok Yoon, Muya Chang, Win-San Khwa, Yu-Der Chih, Meng-Fan Chang, Arijit Raychowdhury
A 40-nm 118.44-TOPS/W Voltage-Sensing Compute-in-Memory RRAM Macro With Write Verification and Multi-Bit Encoding. IEEE J. Solid State Circuits 57 (3) (2022)
Yen-Cheng Chiu, Chia-Sheng Yang, Shih-Hsih Teng, Hsiao-Yu Huang, Fu-Chun Chang, Yuan Wu, Yu-An Chien, Fang-Ling Hsieh, Chung-Yuan Li, Guan-Yi Lin, Po-Jung Chen, Tsen-Hsiang Pan, Chung-Chuan Lo, Win-San Khwa, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Chieh-Pu Lo, Yu-Der Chih, Tsung-Yung, Jonathan Chang, Meng-Fan Chang
A 22nm 4Mb STT-MRAM Data-Encrypted Near-Memory Computation Macro with a 192GB/s Read-and-Decryption Bandwidth and 25.1-55.1TOPS/W 8b MAC for AI Operations. ISSCC (2022)
Je-Min Hung, Yen-Hsiang Huang, Sheng-Po Huang, Fu-Chun Chang, Tai-Hao Wen, Chin-I Su, Win-San Khwa, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang
An 8-Mb DC-Current-Free Binary-to-8b Precision ReRAM Nonvolatile Computing-in-Memory Macro using Time-Space-Readout with 1286.4-21.6TOPS/W for Edge-AI Devices. ISSCC (2022)
Jong-Hyeok Yoon, Muya Chang, Win-San Khwa, Yu-Der Chih, Meng-Fan Chang, Arijit Raychowdhury
29.1 A 40nm 64Kb 56.67TOPS/W Read-Disturb-Tolerant Compute-in-Memory/Digital RRAM Macro with Active-Feedback-Based Read and In-Situ Write Verification. ISSCC (2021)
Mahmut E. Sinangil, Burak Erbagci, Rawan Naous, Kerem Akarvardar, Dar Sun, Win-San Khwa, Hung-Jen Liao, Yih Wang, Jonathan Chang
A 7-nm Compute-in-Memory SRAM Macro Supporting Multi-Bit Input, Weight and Output and Achieving 351 TOPS/W and 372.4 GOPS. IEEE J. Solid State Circuits 56 (1) (2021)
Massimo Giordano, Kartik Prabhu, Kalhan Koul, Robert Radway, Albert Gural, Rohan Doshi, Zainab F. Khan, John W. Kustin, Timothy Liu, Gregorio B. Lopes, Victor Turbiner, Win-San Khwa, Yu-Der Chih, Meng-Fan Chang, Guénolé Lallement, Boris Murmann, Subhasish Mitra, Priyanka Raina
CHIMERA: A 0.92 TOPS, 2.2 TOPS/W Edge AI Accelerator with 2 MByte On-Chip Foundry Resistive RAM for Efficient Training and Inference. VLSI Circuits (2021)
Cheng-Xin Xue, Je-Min Hung, Hui-Yao Kao, Yen-Hsiang Huang, Sheng-Po Huang, Fu-Chun Chang, Peng Chen, Ta-Wei Liu, Chuan-Jia Jhang, Chin-I Su, Win-San Khwa, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang
A 22nm 4Mb 8b-Precision ReRAM Computing-in-Memory Macro with 11.91 to 195.7TOPS/W for Tiny AI Edge Devices. ISSCC (2021)
Jong-Hyeok Yoon, Muya Chang, Win-San Khwa, Yu-Der Chih, Meng-Fan Chang, Arijit Raychowdhury
A 40nm 100Kb 118.44TOPS/W Ternary-weight Computein-Memory RRAM Macro with Voltage-sensing Read and Write Verification for reliable multi-bit RRAM operation. CICC (2021)
Qing Dong, Mahmut E. Sinangil, Burak Erbagci, Dar Sun, Win-San Khwa, Hung-Jen Liao, Yih Wang, Jonathan Chang
15.3 A 351TOPS/W and 372.4GOPS Compute-in-Memory SRAM Macro in 7nm FinFET CMOS for Machine-Learning Applications. ISSCC (2020)
Ruiqi Guo, Yonggang Liu, Shixuan Zheng, Ssu-Yen Wu, Peng Ouyang, Win-San Khwa, Xi Chen, Jia-Jing Chen, Xiudong Li, Leibo Liu, Meng-Fan Chang, Shaojun Wei, Shouyi Yin
A 5.1pJ/Neuron 127.3us/Inference RNN-based Speech Recognition Processor using 16 Computing-in-Memory SRAM Macros in 65nm CMOS. VLSI Circuits (2019)
Xin Si, Win-San Khwa, Jia-Jing Chen, Jia-Fang Li, Xiaoyu Sun, Rui Liu, Shimeng Yu, Hiroyuki Yamauchi, Qiang Li, Meng-Fan Chang
A Dual-Split 6T SRAM-Based Computing-in-Memory Unit-Macro With Fully Parallel Product-Sum Operation for Binarized DNN Edge Processors. IEEE Trans. Circuits Syst. I Regul. Pap. (11) (2019)
Win-San Khwa, Jia-Jing Chen, Jia-Fang Li, Xin Si, En-Yu Yang, Xiaoyu Sun, Rui Liu, Pai-Yu Chen, Qiang Li, Shimeng Yu, Meng-Fan Chang
A 65nm 4Kb algorithm-dependent computing-in-memory SRAM unit-macro with 2.3ns and 55.8TOPS/W fully parallel product-sum operation for binary DNN edge processors. ISSCC (2018)
Rui Liu, Xiaochen Peng, Xiaoyu Sun, Win-San Khwa, Xin Si, Jia-Jing Chen, Jia-Fang Li, Meng-Fan Chang, Shimeng Yu
Parallelizing SRAM arrays with customized bit-cell for binary neural networks. DAC (2018)
Win-San Khwa, Meng-Fan Chang, Jau-Yi Wu, Ming-Hsiu Lee, Tzu-Hsiang Su, Keng-Hao Yang, Tien-Fu Chen, Tien-Yen Wang, Hsiang-Pang Li, Matthew J. BrightSky, SangBum Kim, Hsiang-Lam Lung, Chung Lam
A Resistance Drift Compensation Scheme to Reduce MLC PCM Raw BER by Over 100× for Storage Class Memory Applications. IEEE J. Solid State Circuits 52 (1) (2017)
Wei-Hao Chen, Win-San Khwa, Jun-Yi Li, Wei-Yu Lin, Huan-Ting Lin, Yongpan Liu, Yu Wang, Huaqiang Wu, Huazhong Yang, Meng-Fan Chang
Circuit design for beyond von Neumann applications using emerging memory: From nonvolatile logics to neuromorphic computing. ISQED (2017)
Win-San Khwa, Meng-Fan Chang, Jau-Yi Wu, Ming-Hsiu Lee, Tzu-Hsiang Su, Keng-Hao Yang, Tien-Fu Chen, Tien-Yen Wang, Hsiang-Pang Li, Matthew BrightSky, SangBum Kim, Hsiang-Lam Lung, Chung Lam
7.3 A resistance-drift compensation scheme to reduce MLC PCM raw BER by over 100× for storage-class memory applications. ISSCC (2016)