A 40nm 100Kb 118.44TOPS/W Ternary-weight Computein-Memory RRAM Macro with Voltage-sensing Read and Write Verification for reliable multi-bit RRAM operation.
Jong-Hyeok YoonMuya ChangWin-San KhwaYu-Der ChihMeng-Fan ChangArijit RaychowdhuryPublished in: CICC (2021)
Keyphrases
- write operations
- storage medium
- read write
- solid state
- metal oxide
- flash memory
- data access
- storage devices
- random access memory
- formal verification
- clock gating
- low voltage
- hard disk
- physical layout
- main memory
- model checking
- knowledge base
- neural network
- disk drives
- high voltage
- signature verification
- memory usage
- memory requirements
- database systems
- electric field
- power system
- verification method
- file system
- real time
- normal operation
- virtual memory
- cmos technology
- power supply
- external memory