29.1 A 40nm 64Kb 56.67TOPS/W Read-Disturb-Tolerant Compute-in-Memory/Digital RRAM Macro with Active-Feedback-Based Read and In-Situ Write Verification.
Jong-Hyeok YoonMuya ChangWin-San KhwaYu-Der ChihMeng-Fan ChangArijit RaychowdhuryPublished in: ISSCC (2021)