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A 40-nm 118.44-TOPS/W Voltage-Sensing Compute-in-Memory RRAM Macro With Write Verification and Multi-Bit Encoding.
Jong-Hyeok Yoon
Muya Chang
Win-San Khwa
Yu-Der Chih
Meng-Fan Chang
Arijit Raychowdhury
Published in:
IEEE J. Solid State Circuits (2022)
Keyphrases
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metal oxide
memory usage
random access memory
power system
bit string
virtual memory
model checking
binary representation
sensor networks
read write
memory requirements
main memory
bit wise
encoding scheme
gray code
low voltage
shift register
nm technology