A 40-nm, 64-Kb, 56.67 TOPS/W Voltage-Sensing Computing-In-Memory/Digital RRAM Macro Supporting Iterative Write With Verification and Online Read-Disturb Detection.
Jong-Hyeok YoonMuya ChangWin-San KhwaYu-Der ChihMeng-Fan ChangArijit RaychowdhuryPublished in: IEEE J. Solid State Circuits (2022)