Dar Sun

Publication Activity (10 Years)

Years Active: 2012-2022
Publications (10 Years): 5

Top Topics

Write Operations

Random Access Memory

Top Venues

IEEE J. Solid State Circuits

Publications

Hidehiro Fujiwara, Haruki Mori, Wei-Chang Zhao, Mei-Chen Chuang, Rawan Naous, Chao-Kai Chuang, Takeshi Hashizume, Dar Sun, Chia-Fu Lee, Kerem Akarvardar, Saman Adham, Tan-Li Chou, Mahmut Ersin Sinangil, Yih Wang, Yu-Der Chih, Yen-Huei Chen, Hung-Jen Liao, Tsung-Yung Jonathan Chang
Fully-Digital Computing-in-Memory Macro Supporting Wide-Range Dynamic-Voltage-Frequency Scaling and Simultaneous MAC and Write Operations. ISSCC (2022)
Yu-Der Chih, Po-Hao Lee, Hidehiro Fujiwara, Yi-Chun Shih, Chia-Fu Lee, Rawan Naous, Yu-Lin Chen, Chieh-Pu Lo, Cheng-Han Lu, Haruki Mori, Wei-Cheng Zhao, Dar Sun, Mahmut E. Sinangil, Yen-Huei Chen, Tan-Li Chou, Kerem Akarvardar, Hung-Jen Liao, Yih Wang, Meng-Fan Chang, Tsung-Yung Jonathan Chang
All-Digital SRAM-Based Full-Precision Compute-In Memory Macro in 22nm for Machine-Learning Edge Applications. ISSCC (2021)
Mahmut E. Sinangil, Burak Erbagci, Rawan Naous, Kerem Akarvardar, Dar Sun, Win-San Khwa, Hung-Jen Liao, Yih Wang, Jonathan Chang
A 7-nm Compute-in-Memory SRAM Macro Supporting Multi-Bit Input, Weight and Output and Achieving 351 TOPS/W and 372.4 GOPS. IEEE J. Solid State Circuits 56 (1) (2021)
Qing Dong, Mahmut E. Sinangil, Burak Erbagci, Dar Sun, Win-San Khwa, Hung-Jen Liao, Yih Wang, Jonathan Chang
15.3 A 351TOPS/W and 372.4GOPS Compute-in-Memory SRAM Macro in 7nm FinFET CMOS for Machine-Learning Applications. ISSCC (2020)
Hidehiro Fujiwara, Yen-Huei Chen, Chih-Yu Lin, Wei-Cheng Wu, Dar Sun, Shin-Rung Wu, Hung-Jen Liao, Jonathan Chang
A 64-Kb 0.37V 28nm 10T-SRAM with mixed-Vth read-port and boosted WL scheme for IoT applications. A-SSCC (2016)
Hidehiro Fujiwara, Li-Wen Wang, Yen-Huei Chen, Kao-Cheng Lin, Dar Sun, Shin-Rung Wu, Jhon-Jhy Liaw, Chih-Yung Lin, Mu-Chi Chiang, Hung-Jen Liao, Shien-Yang Wu, Jonathan Chang
17.2 A 64kb 16nm asynchronous disturb current free 2-port SRAM with PMOS pass-gates for FinFET technologies. ISSCC (2015)
Yen-Huei Chen, Shao-Yu Chou, Quincy Li, Wei-Min Chan, Dar Sun, Hung-Jen Liao, Ping Wang, Meng-Fan Chang, Hiroyuki Yamauchi
Compact Measurement Schemes for Bit-Line Swing, Sense Amplifier Offset Voltage, and Word-Line Pulse Width to Characterize Sensing Tolerance Margin in a 40 nm Fully Functional Embedded SRAM. IEEE J. Solid State Circuits 47 (4) (2012)