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17.2 A 64kb 16nm asynchronous disturb current free 2-port SRAM with PMOS pass-gates for FinFET technologies.

Hidehiro FujiwaraLi-Wen WangYen-Huei ChenKao-Cheng LinDar SunShin-Rung WuJhon-Jhy LiawChih-Yung LinMu-Chi ChiangHung-Jen LiaoShien-Yang WuJonathan Chang
Published in: ISSCC (2015)
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