Thiago Copetti

Publication Activity (10 Years)

Years Active: 2012-2024
Publications (10 Years): 12

Top Topics

Programmable Logic

Hardware Description Language

Defect Detection

Integrated Circuit

Top Venues

J. Electron. Test.

Publications

Thiago Copetti, A. Chordia, Moritz Fieback, Mottaqiallah Taouil, Said Hamdioui, Letícia Maria Veiras Bolzani
Analyzing the Use of Temperature to Facilitate Fault Propagation in ReRAMs. LATS (2024)
Hanzhi Xun, Moritz Fieback, Sicong Yuan, Hassen Aziza, Mathijs Heidekamp, Thiago Copetti, Letícia Maria Veiras Bolzani Poehls, Mottaqiallah Taouil, Said Hamdioui
Characterization and Test of Intermittent Over RESET in RRAMs. ATS (2023)
Letícia Maria Veiras Bolzani, Moritz Fieback, Susanne Hoffmann-Eifert, Thiago Copetti, E. Brum, Stephan Menzel, Said Hamdioui, Tobias Gemmeke
Review of Manufacturing Process Defects and Their Effects on Memristive Devices. J. Electron. Test. 37 (4) (2021)
Thiago Copetti, Guilherme Cardoso Medeiros, Mottaqiallah Taouil, Said Hamdioui, Letícia Maria Bolzani Poehls, Tiago Roberto Balen
Evaluation of Single Event Upset Susceptibility of FinFET-based SRAMs with Weak Resistive Defects. J. Electron. Test. 37 (3) (2021)
Thiago Copetti, Tiago R. Balen, E. Brum, C. Aquistapace, Leticia Bolzani Poehls
Comparing the Impact of Power Supply Voltage on CMOS- and FinFET-Based SRAMs in the Presence of Resistive Defects. J. Electron. Test. 36 (2) (2020)
Thiago Copetti, Guilherme Cardoso Medeiros, Mottaqiallah Taouil, Said Hamdioui, Leticia Bolzani Poehls, Tiago R. Balen
Evaluating the Impact of Ionizing Particles on FinFET -based SRAMs with Weak Resistive Defects. LATS (2020)
G. Cardoso Medeiros, E. Brum, Leticia Bolzani Poehls, Thiago Copetti, Tiago R. Balen
Evaluating the Impact of Temperature on Dynamic Fault Behaviour of FinFET-Based SRAMs with Resistive Defects. J. Electron. Test. 35 (2) (2019)
G. Cardoso Medeiros, E. Brum, Leticia Bolzani Poehls, Thiago Copetti, Tiago R. Balen
Influence of temperature on dynamic fault behavior due to resistive defects in FinFET-based SRAMs. LATS (2018)
M. Tulio Martins, G. Cardoso Medeiros, Thiago Copetti, Fabian Vargas, Marcus Pohls
Analysing NBTI Impact on SRAMs with Resistive Defects. J. Electron. Test. 33 (5) (2017)
M. Tulio Martins, G. Cardoso Medeiros, Thiago Copetti, Fabian Vargas, Letícia Maria Bolzani Poehls
Analyzing NBTI impact on SRAMs with resistive-open defects. LATS (2016)
Thiago Copetti, Guilherme Medeiros Machado, Leticia Bolzani Poehls, Fabian Vargas, Sergei Kostin, Maksim Jenihhin, Jaan Raik, Raimund Ubar
Gate-level modelling of NBTI-induced delays under process variations. LATS (2016)
Thiago Copetti, Guilherme Cardoso Medeiros, Leticia Bolzani Poehls, Fabian Vargas
NBTI-Aware Design of Integrated Circuits: A Hardware-Based Approach for Increasing Circuits' Life Time. J. Electron. Test. 32 (3) (2016)
Sergei Kostin, Jaan Raik, Raimund Ubar, Maksim Jenihhin, Thiago Copetti, Fabian Vargas, Letícia Maria Bolzani Pöhls
SPICE-Inspired Fast Gate-Level Computation of NBTI-induced Delays in Nanoscale Logic. DDECS (2015)
Thiago Copetti, G. Cardoso Medeiros, Letícia Maria Bolzani Poehls, Fabian Vargas
NBTI-aware design of integrated circuits: a hardware-based approach. LATS (2015)
Arthur Ceratti, Thiago Copetti, Letícia Maria Bolzani Poehls, Fabian Vargas, Rubem Dutra Ribeiro Fagundes
An On-Chip Sensor to Monitor NBTI Effects in SRAMs. J. Electron. Test. 30 (2) (2014)
Arthur Ceratti, Thiago Copetti, Letícia Maria Bolzani Poehls, Fabian Vargas
On-chip aging sensor to monitor NBTI effect in nano-scale SRAM. DDECS (2012)
Arthur Ceratti, Thiago Copetti, Letícia Maria Veiras Bolzani, Fabian Vargas
Investigating the use of an on-chip sensor to monitor NBTI effect in SRAM. LATW (2012)