Susanne Hoffmann-Eifert

Publication Activity (10 Years)

Years Active: 2016-2023
Publications (10 Years): 10

Top Topics

Manufacturing Process

Neuronal Networks

Top Venues

J. Electron. Test.

Publications

Yongmin Wang, Kristoffer Schnieders, Vasileios Ntinas, Alon Ascoli, Felix Cüppers, Susanne Hoffmann-Eifert, Stefan Wiefels, Ronald Tetzlaff, Vikas Rana, Stephan Menzel
Experimental Verification of Uncoupled Memristive Cellular Nonlinear Network by Processing the EDGE Detection Task. NANOARCH (2023)
Kristoffer Schnieders, Stephan Aussen, Felix Cüppers, Susanne Hoffmann-Eifert, Stefan Wiefels
Impact of the switching mode on the read noise of ReRAM devices. NANOARCH (2023)
Solomon Amsalu Chekol, Rainer Waser, Susanne Hoffmann-Eifert
Controllability of Relaxation Behavior in Ag-based Diffusive Memristors. DRC (2023)
Carsten Funck, Stefan Wiefels, Christopher Bengel, Kristoffer Schnieders, Susanne Hoffmann-Eifert, Regina Dittmann, Stephan Menzel
A Physical Description of the Variability in Single-ReRAM Devices and Hardware-Based Neuronal Networks. Adv. Intell. Syst. 5 (11) (2023)
Susanne Hoffmann-Eifert
Nanoscale HfO2-based memristive devices for neuromorphic computing. DRC (2022)
Melvin Galicia, Stephan Menzel, Farhad Merchant, Maximilian Müller, Hsin-Yu Chen, Qing-Tai Zhao, Felix Cüppers, Abdur R. Jalil, Qi Shu, Peter Schüffelgen, Gregor Mussler, Carsten Funck, Christian Lanius, Stefan Wiefels, Moritz von Witzleben, Christopher Bengel, Nils Kopperberg, Tobias Ziegler, R. Walied Ahmad, Alexander Krüger, Leticia Pöhls, Regina Dittmann, Susanne Hoffmann-Eifert, Vikas Rana, Detlev Grützmacher, Matthias Wuttig, Dirk J. Wouters, Andrei Vescan, Tobias Gemmeke, Joachim Knoch, Max C. Lemme, Rainer Leupers, Rainer Waser
NEUROTEC I: Neuro-inspired Artificial Intelligence Technologies for the Electronics of the Future. DATE (2022)
Letícia Maria Veiras Bolzani, Moritz Fieback, Susanne Hoffmann-Eifert, Thiago Copetti, E. Brum, Stephan Menzel, Said Hamdioui, Tobias Gemmeke
Review of Manufacturing Process Defects and Their Effects on Memristive Devices. J. Electron. Test. 37 (4) (2021)
Solomon Amsalu Chekol, Felix Cüppers, Rainer Waser, Susanne Hoffmann-Eifert
An Ag/HfO2/Pt Threshold Switching Device with an Ultra-Low Leakage ( 1011), and Low Threshold Voltage (< 0.2 V) for Energy-Efficient Neuromorphic Computing. IMW (2021)
Christopher Bengel, Anne Siemon, Felix Cüppers, Susanne Hoffmann-Eifert, Alexander Hardtdegen, Moritz von Witzleben, Lena Hellmich, Rainer Waser, Stephan Menzel
Variability-Aware Modeling of Filamentary Oxide-Based Bipolar Resistive Switching Cells Using SPICE Level Compact Models. IEEE Trans. Circuits Syst. (12) (2020)
Karsten Fleck, Ulrich Böttger, Rainer Waser, Nabeel Aslam, Susanne Hoffmann-Eifert, Stephan Menzel
Energy dissipation during pulsed switching of strontium-titanate based resistive switching memory devices. ESSDERC (2016)