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A. Curutchet
Publication Activity (10 Years)
Years Active: 2003-2017
Publications (10 Years): 4
Top Topics
Reliability Assessment
Dct Coefficients
Electrical Properties
Leakage Current
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Publications
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Kalparupa Mukherjee
,
Frédéric Darracq
,
Arnaud Curutchet
,
Nathalie Malbert
,
Nathalie Labat
TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices.
Microelectron. Reliab.
(2017)
H. Lakhdhar
,
Nathalie Labat
,
Arnaud Curutchet
,
Nicolas Defrance
,
Marie Lesecq
,
J.-C. de Jaeger
,
Nathalie Malbert
Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress.
Microelectron. Reliab.
64 (2016)
Pamela Del Vecchio
,
Arnaud Curutchet
,
Yannick Deshayes
,
M. Bettiati
,
F. Laruelle
,
Nathalie Labat
,
Laurent Béchou
Correlation between forward-reverse low-frequency noise and atypical I-V signatures in 980 nm high-power laser diodes.
Microelectron. Reliab.
55 (9-10) (2015)
M. Rzin
,
Nathalie Labat
,
Nathalie Malbert
,
Arnaud Curutchet
,
Laurent Brunel
,
Benoit Lambert
Investigation of the dynamic on-state resistance of AlGaN/GaN HEMTs.
Microelectron. Reliab.
55 (9-10) (2015)
S. Karboyan
,
Jean-Guy Tartarin
,
M. Rzin
,
Laurent Brunel
,
Arnaud Curutchet
,
Nathalie Malbert
,
Nathalie Labat
,
D. Carisetti
,
Benoit Lambert
,
M. Mermoux
,
E. Romain-Latu
,
F. Thomas
,
C. Bouexière
,
C. Moreau
Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements.
Microelectron. Reliab.
53 (9-11) (2013)
Benoit Lambert
,
Nathalie Labat
,
Dominique Carisetti
,
Serge Karboyan
,
Jean-Guy Tartarin
,
Jim Thorpe
,
Laurent Brunel
,
Arnaud Curutchet
,
Nathalie Malbert
,
Eddy Latu-Romain
,
Michel Mermoux
Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test.
Microelectron. Reliab.
52 (9-10) (2012)
Nathalie Malbert
,
Nathalie Labat
,
Arnaud Curutchet
,
C. Sury
,
V. Hoel
,
J.-C. de Jaeger
,
Nicolas Defrance
,
Y. Douvry
,
Christian Dua
,
Mourad Oualli
,
C. Bru-Chevallier
,
Jean-Marie Bluet
,
W. Chikhaoui
Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs.
Microelectron. Reliab.
49 (9-11) (2009)
A. Sozza
,
Arnaud Curutchet
,
Christian Dua
,
Nathalie Malbert
,
Nathalie Labat
,
André Touboul
AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements.
Microelectron. Reliab.
46 (9-11) (2006)
Arnaud Curutchet
,
Nathalie Malbert
,
Nathalie Labat
,
André Touboul
,
Christophe Gaquière
,
A. Minko
,
Michael J. Uren
Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates.
Microelectron. Reliab.
43 (9-11) (2003)