Hideo Ohno

Publication Activity (10 Years)

Years Active: 1994-2023
Publications (10 Years): 14

Top Topics

Write Operations

Associative Memory

Cmos Technology

Top Venues

IEICE Electron. Express

IEEE J. Solid State Circuits

IEEE J. Emerg. Sel. Topics Circuits Syst.

Publications

Shuvro Chowdhury, Andrea Grimaldi, Navid Anjum Aadit, Shaila Niazi, Masoud Mohseni, Shun Kanai, Hideo Ohno, Shunsuke Fukami, Luke Theogarajan, Giovanni Finocchio, Supriyo Datta, Kerem Yunus Camsari
A full-stack view of probabilistic computing with p-bits: devices, architectures and algorithms. CoRR (2023)
Keito Kobayashi, Nihal Singh, Qixuan Cao, Kemal Selcuk, Tianrui Hu, Shaila Niazi, Navid Anjum Aadit, Shun Kanai, Hideo Ohno, Shunsuke Fukami, Kerem Yunus Camsari
CMOS + stochastic nanomagnets: heterogeneous computers for probabilistic inference and learning. CoRR (2023)
Kemal Selcuk, Shun Kanai, Rikuto Ota, Hideo Ohno, Shunsuke Fukami, Kerem Yunus Camsari
Double-Free-Layer Stochastic Magnetic Tunnel Junctions with Synthetic Antiferromagnets. CoRR (2023)
Masanori Natsui, Akira Tamakoshi, Hiroaki Honjo, Toshinari Watanabe, Takashi Nasuno, Chaoliang Zhang, Takaho Tanigawa, Hirofumi Inoue, Masaaki Niwa, Toru Yoshiduka, Yasuo Noguchi, Mitsuo Yasuhira, Yitao Ma, Hui Shen, Shunsuke Fukami, Hideo Sato, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh, Takahiro Hanyu
Dual-Port SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations Under Field-Assistance-Free Condition. IEEE J. Solid State Circuits 56 (4) (2021)
Jan Kaiser, William A. Borders, Kerem Yunus Camsari, Shunsuke Fukami, Hideo Ohno, Supriyo Datta
Hardware-aware in-situ Boltzmann machine learning using stochastic magnetic tunnel junctions. CoRR (2021)
Kerem Yunus Camsari, Mustafa Mert Torunbalci, William A. Borders, Hideo Ohno, Shunsuke Fukami
Double Free-Layer Magnetic Tunnel Junctions for Probabilistic Bits. CoRR (2020)
Masanori Natsui, Akira Tamakoshi, Hiroaki Honjo, Toshinari Watanabe, Takashi Nasuno, Chaoliang Zhang, Takaho Tanigawa, Hirofumi Inoue, Masaaki Niwa, Toru Yoshiduka, Yasuo Noguchi, Mitsuo Yasuhira, Yitao Ma, Hui Shen, Shunsuke Fukami, Hideo Sato, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh, Takahiro Hanyu
Dual-Port Field-Free SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under 55-nm CMOS Technology and 1.2-V Supply Voltage. VLSI Circuits (2020)
William A. Borders, Ahmed Zeeshan Pervaiz, Shunsuke Fukami, Kerem Yunus Camsari, Hideo Ohno, Supriyo Datta
Integer factorization using stochastic magnetic tunnel junctions. Nat. 573 (7774) (2019)
Masanori Natsui, Daisuke Suzuki, Akira Tamakoshi, Toshinari Watanabe, Hiroaki Honjo, Hiroki Koike, Takashi Nasuno, Yitao Ma, Takaho Tanigawa, Yasuo Noguchi, Mitsuo Yasuhira, Hideo Sato, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh, Takahiro Hanyu
An FPGA-Accelerated Fully Nonvolatile Microcontroller Unit for Sensor-Node Applications in 40nm CMOS/MTJ-Hybrid Technology Achieving 47.14μW Operation at 200MHz. ISSCC (2019)
Masanori Natsui, Daisuke Suzuki, Akira Tamakoshi, Toshinari Watanabe, Hiroaki Honjo, Hiroki Koike, Takashi Nasuno, Yitao Ma, Takaho Tanigawa, Yasuo Noguchi, Mitsuo Yasuhira, Hideo Sato, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh, Takahiro Hanyu
A 47.14-µW 200-MHz MOS/MTJ-Hybrid Nonvolatile Microcontroller Unit Embedding STT-MRAM and FPGA for IoT Applications. IEEE J. Solid State Circuits 54 (11) (2019)
Tetsuo Endoh, Hiroki Koike, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno
An Overview of Nonvolatile Emerging Memories - Spintronics for Working Memories. IEEE J. Emerg. Sel. Topics Circuits Syst. 6 (2) (2016)
Takahiro Hanyu, Tetsuo Endoh, Daisuke Suzuki, Hiroki Koike, Yitao Ma, Naoya Onizawa, Masanori Natsui, Shoji Ikeda, Hideo Ohno
Standby-Power-Free Integrated Circuits Using MTJ-Based VLSI Computing. Proc. IEEE 104 (10) (2016)
Hideo Ohno, Mark D. Stiles, Bernard Dieny
Spintronics [Scanning the Issue]. Proc. IEEE 104 (10) (2016)
Masanori Natsui, Akira Tamakoshi, Akira Mochizuki, Hiroki Koike, Hideo Ohno, Tetsuo Endoh, Takahiro Hanyu
Stochastic behavior-considered VLSI CAD environment for MTJ/MOS-hybrid microprocessor design. ISCAS (2016)
Daisuke Suzuki, Masanori Natsui, Akira Mochizuki, Sadahiko Miura, Hiroaki Honjo, Hideo Sato, Shunsuke Fukami, Shoji Ikeda, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu
Fabrication of a 3000-6-input-LUTs embedded and block-level power-gated nonvolatile FPGA chip using p-MTJ-based logic-in-memory structure. VLSIC (2015)
Masanori Natsui, Daisuke Suzuki, Noboru Sakimura, Ryusuke Nebashi, Yukihide Tsuji, Ayuka Morioka, Tadahiko Sugibayashi, Sadahiko Miura, Hiroaki Honjo, Keizo Kinoshita, Shoji Ikeda, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu
Nonvolatile Logic-in-Memory LSI Using Cycle-Based Power Gating and its Application to Motion-Vector Prediction. IEEE J. Solid State Circuits 50 (2) (2015)
Shunsuke Fukami, Hideo Sato, Michihiko Yamanouchi, Shoji Ikeda, Fumihiro Matsukura, Hideo Ohno
Advances in spintronics devices for microelectronics - From spin-transfer torque to spin-orbit torque. ASP-DAC (2014)
Shoun Matsunaga, Akira Mochizuki, Noboru Sakimura, Ryusuke Nebashi, Tadahiko Sugibayashi, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu
Complementary 5T-4MTJ nonvolatile TCAM cell circuit with phase-selective parallel writing scheme. IEICE Electron. Express 11 (10) (2014)
Shoun Matsunaga, Akira Mochizuki, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu
Design of an energy-efficient 2T-2MTJ nonvolatile TCAM based on a parallel-serial-combined search scheme. IEICE Electron. Express 11 (3) (2014)
Daisuke Suzuki, Noboru Sakimura, Masanori Natsui, Akira Mochizuki, Tadahiko Sugibayashi, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu
A compact low-power nonvolatile flip-flop using domain-wall-motion-device-based single-ended structure. IEICE Electron. Express 11 (13) (2014)
Hooman Jarollahi, Naoya Onizawa, Vincent Gripon, Noboru Sakimura, Tadahiko Sugibayashi, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu, Warren J. Gross
A Nonvolatile Associative Memory-Based Context-Driven Search Engine Using 90 nm CMOS/MTJ-Hybrid Logic-in-Memory Architecture. IEEE J. Emerg. Sel. Topics Circuits Syst. 4 (4) (2014)
Ryusuke Nebashi, Noboru Sakimura, Hiroaki Honjo, Ayuka Morioka, Yukihide Tsuji, Kunihiko Ishihara, Keiichi Tokutome, Sadahiko Miura, Shunsuke Fukami, Keizo Kinoshita, Takahiro Hanyu, Tetsuo Endoh, Naoki Kasai, Hideo Ohno, Tadahiko Sugibayashi
A delay circuit with 4-terminal magnetic-random-access-memory device for power-efficient time- domain signal processing. ISCAS (2014)
Noboru Sakimura, Yukihide Tsuji, Ryusuke Nebashi, Hiroaki Honjo, Ayuka Morioka, Kunihiko Ishihara, Keizo Kinoshita, Shunsuke Fukami, Sadahiko Miura, Naoki Kasai, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu, Tadahiko Sugibayashi
10.5 A 90nm 20MHz fully nonvolatile microcontroller for standby-power-critical applications. ISSCC (2014)
Daisuke Suzuki, Masanori Natsui, Akira Mochizuki, Sadahiko Miura, Hiroaki Honjo, Keizo Kinoshita, Hideo Sato, Shoji Ikeda, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu
Fabrication of a magnetic tunnel junction-based 240-tile nonvolatile field-programmable gate array chip skipping wasted write operations for greedy power-reduced logic applications. IEICE Electron. Express 10 (23) (2013)
Takashi Ohsawa, Hiroki Koike, Sadahiko Miura, Hiroaki Honjo, Keizo Kinoshita, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh
A 1 Mb Nonvolatile Embedded Memory Using 4T2MTJ Cell With 32 b Fine-Grained Power Gating Scheme. IEEE J. Solid State Circuits 48 (6) (2013)
Masanori Natsui, Daisuke Suzuki, Noboru Sakimura, Ryusuke Nebashi, Yukihide Tsuji, Ayuka Morioka, Tadahiko Sugibayashi, Sadahiko Miura, Hiroaki Honjo, Keizo Kinoshita, Shoji Ikeda, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu
Nonvolatile logic-in-memory array processor in 90nm MTJ/MOS achieving 75% leakage reduction using cycle-based power gating. ISSCC (2013)
Shoun Matsunaga, Masanori Natsui, Shoji Ikeda, Katsuya Miura, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu
Implementation of a perpendicular MTJ-based read-disturb-tolerant 2T-2R nonvolatile TCAM based on a reversed current reading scheme. ASP-DAC (2012)
Noboru Sakimura, Ryusuke Nebashi, Yukihide Tsuji, Hiroaki Honjo, Tadahiko Sugibayashi, Hiroki Koike, Takashi Ohsawa, Shunsuke Fukami, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh
High-speed simulator including accurate MTJ models for spintronics integrated circuit design. ISCAS (2012)
Takashi Ohsawa, Hiroki Koike, Sadahiko Miura, Hiroaki Honjo, Keiichi Tokutome, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh
1Mb 4T-2MTJ nonvolatile STT-RAM for embedded memories using 32b fine-grained power gating technique with 1.0ns/200ps wake-up/power-off times. VLSIC (2012)
Shoun Matsunaga, Sadahiko Miura, Hiroaki Honjou, Keizo Kinoshita, Shoji Ikeda, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu
4T-2MTJ-cell fully parallel TCAM based on nonvolatile logic-in-memory architecture. VLSIC (2012)
Takayuki Kawahara, Kenchi Ito, Riichiro Takemura, Hideo Ohno
Spin-transfer torque RAM technology: Review and prospect. Microelectron. Reliab. 52 (4) (2012)
Masashi Kamiyanagi, Fumitaka Iga, Shoji Ikeda, Katsuya Miura, Jun Hayakawa, Haruhiro Hasegawa, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh
Transient Characteristic of Fabricated Magnetic Tunnel Junction (MTJ) Programmed with CMOS Circuit. IEICE Trans. Electron. (5) (2010)
Fumitaka Iga, Masashi Kamiyanagi, Shoji Ikeda, Katsuya Miura, Jun Hayakawa, Haruhiro Hasegawa, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh
Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-End Metal Line of CMOS Circuits. IEICE Trans. Electron. (5) (2010)
Riichiro Takemura, Takayuki Kawahara, Katsuya Miura, Hiroyuki Yamamoto, Jun Hayakawa, Nozomu Matsuzaki, Kazuo Ono, Michihiko Yamanouchi, Kenchi Ito, Hiromasa Takahashi, Shoji Ikeda, Haruhiro Hasegawa, Hideyuki Matsuoka, Hideo Ohno
A 32-Mb SPRAM With 2T1R Memory Cell, Localized Bi-Directional Write Driver and '1'/'0' Dual-Array Equalized Reference Scheme. IEEE J. Solid State Circuits 45 (4) (2010)
Shoun Matsunaga, Jun Hayakawa, Shoji Ikeda, Katsuya Miura, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu
MTJ-based nonvolatile logic-in-memory circuit, future prospects and issues. DATE (2009)
Takayuki Kawahara, Riichiro Takemura, Katsuya Miura, Jun Hayakawa, Shoji Ikeda, Young Min Lee, Ryutaro Sasaki, Yasushi Goto, Kenchi Ito, Toshiyasu Meguro, Fumihiro Matsukura, Hiromasa Takahashi, Hideyuki Matsuoka, Hideo Ohno
2 Mb SPRAM (SPin-Transfer Torque RAM) With Bit-by-Bit Bi-Directional Current Write and Parallelizing-Direction Current Read. IEEE J. Solid State Circuits 43 (1) (2008)
Takayuki Kawahara, Riichiro Takemura, Hiromasa Takahashi, Hideo Ohno
SPRAM (SPin-transfer torque RAM) design and its impact on digital systems. ICECS (2007)
Takayuki Kawahara, Riichiro Takemura, Katsuya Miura, Jun Hayakawa, Shoji Ikeda, Young Min Lee, Ryutaro Sasaki, Yasushi Goto, Kenchi Ito, Toshiyasu Meguro, Fumihiro Matsukura, Hiromasa Takahashi, Hideyuki Matsuoka, Hideo Ohno
2Mb Spin-Transfer Torque RAM (SPRAM) with Bit-by-Bit Bidirectional Current Write and Parallelizing-Direction Current Read. ISSCC (2007)
Fumihiro Matsukura, Daichi Chiba, Michihiko Yamanouchi, Hideo Ohno
Electrical Magnetization Reversal in Ferromagnetic Semiconductors. ICMENS (2004)
Kiyoharu Aizawa, Hideo Ohno, Yuichiro Egi, Takayuki Hamamoto, Mitsutoshi Hatori, Hitoshi Maruyama, Junichi Yamazaki
On sensor image compression. IEEE Trans. Circuits Syst. Video Technol. 7 (3) (1997)
Kiyoharu Aizawa, Hideo Ohno, Takayuki Hamamoto, Mitsutoshi Hatori, Junichi Yamazaki
A Novel Image Sensor for Video Compression. ICIP (3) (1994)