1Mb 4T-2MTJ nonvolatile STT-RAM for embedded memories using 32b fine-grained power gating technique with 1.0ns/200ps wake-up/power-off times.
Takashi OhsawaHiroki KoikeSadahiko MiuraHiroaki HonjoKeiichi TokutomeShoji IkedaTakahiro HanyuHideo OhnoTetsuo EndohPublished in: VLSIC (2012)