Nozomu Matsuzaki

Publication Activity (10 Years)

Years Active: 1996-2010
Publications (10 Years): 0

Publications

Riichiro Takemura, Takayuki Kawahara, Katsuya Miura, Hiroyuki Yamamoto, Jun Hayakawa, Nozomu Matsuzaki, Kazuo Ono, Michihiko Yamanouchi, Kenchi Ito, Hiromasa Takahashi, Shoji Ikeda, Haruhiro Hasegawa, Hideyuki Matsuoka, Hideo Ohno
A 32-Mb SPRAM With 2T1R Memory Cell, Localized Bi-Directional Write Driver and '1'/'0' Dual-Array Equalized Reference Scheme. IEEE J. Solid State Circuits 45 (4) (2010)
Satoru Hanzawa, Naoki Kitai, Kenichi Osada, Akira Kotabe, Yuichi Matsui, Nozomu Matsuzaki, Norikatsu Takaura, Masahiro Moniwa, Takayuki Kawahara
A 512kB Embedded Phase Change Memory with 416kB/s Write Throughput at 100μA Cell Write Current. ISSCC (2007)
Kenichi Osada, Takayuki Kawahara, Riichiro Takemura, Naoki Kitai, Norikatsu Takaura, Nozomu Matsuzaki, Kenzo Kurotsuchi, Hiroshi Moriya, Masahiro Moniwa
Phase change RAM operated with 1.5-V CMOS as low cost embedded memory. CICC (2005)
Hiroyuki Mizuno, Nozomu Matsuzaki, Kenichi Osada, Toshinobu Shinbo, Nagatoshi Ohki, Hiroshi Ishida, Koichiro Ishibashi, Tokuo Kure
A 1-V, 100-MHz, 10-mW cache using a separated bit-line memory hierarchy architecture and domino tag comparators. IEEE J. Solid State Circuits 31 (11) (1996)