A 1 Mb Nonvolatile Embedded Memory Using 4T2MTJ Cell With 32 b Fine-Grained Power Gating Scheme.
Takashi OhsawaHiroki KoikeSadahiko MiuraHiroaki HonjoKeizo KinoshitaShoji IkedaTakahiro HanyuHideo OhnoTetsuo EndohPublished in: IEEE J. Solid State Circuits (2013)