Yanan Sun

Publication Activity (10 Years)

Years Active: 2011-2024
Publications (10 Years): 39

Top Topics

Computing Paradigms

Carbon Nanotubes

Top Venues

IEEE Trans. Circuits Syst. I Regul. Pap.

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.

Publications

Chuxiong Lin, Weifeng He, Yanan Sun, Lin Shao, Bo Zhang, Jun Yang, Mingoo Seok
A Metastability Risk Prediction and Mitigation Technique for Clock-Domain Crossing With Single-Stage Synchronizer in Near-Threshold-Voltage Multivoltage/ Frequency-Domain Network-on-Chip. IEEE J. Solid State Circuits 59 (2) (2024)
Yanan Sun, Zhi Li, Weiyi Liu, Weifeng He, Qin Wang, Zhigang Mao
BC-MVLiM: A Binary-Compatible Multi-Valued Logic-in-Memory Based on Memristive Crossbars. IEEE Trans. Circuits Syst. I Regul. Pap. 70 (5) (2023)
Shunqin Cai, Liukai Xu, Dengfeng Wang, Zhi Li, Liang Chang, Yanan Sun
High Energy-Efficient Approximate In-SRAM Computing with Bit-Wise Compressor Configuration and Data-Aware Weight Remapping Method for Neural Network Acceleration. ICTA (2023)
Yanan Sun, Dengfeng Wang, Liukai Xu, Yiming Chen, Zhi Li, Songyuan Liu, Weifeng He, Yongpan Liu, Huazhong Yang, Xueqing Li
CREAM: Computing in ReRAM-Assisted Energy- and Area-Efficient SRAM for Reliable Neural Network Acceleration. IEEE Trans. Circuits Syst. I Regul. Pap. 70 (8) (2023)
Dengwei Zhao, Shuai Yuan, Yanan Sun, Shikui Tu, Lei Xu
DeepTH: Chip Placement with Deep Reinforcement Learning Using a Three-Head Policy Network. DATE (2023)
Dengfeng Wang, Liukai Xu, Songyuan Liu, Zhi Li, Yiming Chen, Weifeng He, Xueqing Li, Yanan Sun
TL-nvSRAM-CIM: Ultra-High-Density Three-Level ReRAM-Assisted Computing-in-nvSRAM with DC-Power Free Restore and Ternary MAC Operations. CoRR (2023)
Yuxuan Qin, Chuxiong Lin, Weifeng He, Yanan Sun, Zhigang Mao, Mingoo Seok
CDAR-DRAM: Enabling Runtime DRAM Performance and Energy Optimization via In-Situ Charge Detection and Adaptive Data Restoration. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 42 (9) (2023)
Hao Zhang, Weifeng He, Yanan Sun, Mingoo Seok
A DFT-Compatible In-Situ Timing Error Detection and Correction Structure Featuring Low Area and Test Overhead. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 42 (3) (2023)
Jianfeng Wang, Nuo Xiu, Juejian Wu, Yiming Chen, Yanan Sun, Huazhong Yang, Vijaykrishnan Narayanan, Sumitha George, Xueqing Li
An 8T/Cell FeFET-Based Nonvolatile SRAM with Improved Density and Sub-fJ Backup and Restore Energy. ISCAS (2022)
Shuai Yuan, Yanan Sun, Weifeng He, Qianrong Gu, Shi Xu, Zhigang Mao, Shikui Tu
MSLM-RF: A Spatial Feature Enhanced Random Forest for On-Board Hyperspectral Image Classification. IEEE Trans. Geosci. Remote. Sens. 60 (2022)
Ziqi Meng, Yanan Sun, Weikang Qian
Write or not: programming scheme optimization for RRAM-based neuromorphic computing. DAC (2022)
Liukai Xu, Songyuan Liu, Zhi Li, Dengfeng Wang, Yiming Chen, Yanan Sun, Xueqing Li, Weifeng He, Shi Xu
CREAM: computing in ReRAM-assisted energy and area-efficient SRAM for neural network acceleration. DAC (2022)
Chuxiong Lin, Weifeng He, Yanan Sun, Zhigang Mao, Mingoo Seok
CDAR-DRAM: An In-situ Charge Detection and Adaptive Data Restoration DRAM Architecture for Performance and Energy Efficiency Improvement. DAC (2021)
Hao Zhang, Weifeng He, Yanan Sun, Mingoo Seok
An Area-Efficient Scannable In Situ Timing Error Detection Technique Featuring Low Test Overhead for Resilient Circuits. ICCAD (2021)
Hao Zhang, Jieyu Li, Weifeng He, Yanan Sun, Mingoo Seok
An Ultra-Low Leakage Bitcell Structure with the Feedforward Self-Suppression Scheme for Near-Threshold SRAM. ISCAS (2021)
Weiyi Liu, Yanan Sun, Weifeng He, Qin Wang
Design of Ternary Logic-in-Memory Based on Memristive Dual-Crossbars. ISCAS (2021)
Ziqi Meng, Weikang Oian, Yilong Zhao, Yanan Sun, Rui Yang, Li Jiang
Digital Offset for RRAM-based Neuromorphic Computing: A Novel Solution to Conquer Cycle-to-cycle Variation. DATE (2021)
Chuxiong Lin, Weifeng He, Yanan Sun, Bingxi Pei, Pavan Kumar Chundi, Zhigang Mao, Mingoo Seok
MEDAC: A Metastability Condition Detection and Correction Technique for a Near-Threshold-Voltage Multi-Voltage-/Frequency-Domain Network-on-Chip. IEEE J. Solid State Circuits 56 (7) (2021)
Zhuoran Song, Yanan Sun, Lerong Chen, Tianjian Li, Naifeng Jing, Xiaoyao Liang, Li Jiang
ITT-RNA: Imperfection Tolerable Training for RRAM-Crossbar-Based Deep Neural-Network Accelerator. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 40 (1) (2021)
Jieyu Li, Zihan Lian, Hao Zhang, Weifeng He, Yanan Sun, Mingoo Seok
Investigation of Dynamic Leakage-Suppression Logic Techniques Crossing Different Technology Nodes from 180 nm Bulk CMOS to 7 nm FinFET Plus Process. ISCAS (2021)
Hao Zhang, Weifeng He, Yanan Sun, Mingoo Seok
An Energy-Efficient Logic Cell Library Design Methodology with Fine Granularity of Driving Strength for Near- and Sub-Threshold Digital Circuits. ISCAS (2021)
Tianhong Shen, Yanan Sun, Weifeng He, Zhi Li, Weiyi Liu, Zhezhi He, Li Jiang
A Ternary Memristive Logic-in-Memory Design for Fast Data Scan. ICTA (2021)
Yanan Sun, Chang Ma, Zhi Li, Yilong Zhao, Jiachen Jiang, Weikang Qian, Rui Yang, Zhezhi He, Li Jiang
Unary Coding and Variation-Aware Optimal Mapping Scheme for Reliable ReRAM-Based Neuromorphic Computing. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 40 (12) (2021)
Runsheng Wang, Zuodong Zhang, Yawen Zhang, Yixuan Hu, Yanan Sun, Weikang Qian, Ru Huang
Can Emerging Computing Paradigms Help Enhancing Reliability Towards the End of Technology Roadmap? IRPS (2021)
Yanan Sun, Weifeng He, Zhigang Mao, Hailong Jiao, Volkan Kursun
Monolithic 3D Carbon Nanotube Memory for Enhanced Yield and Integration Density. IEEE Trans. Circuits Syst. I Regul. Pap. (7) (2020)
Zhuoran Song, Yilong Zhao, Yanan Sun, Xiaoyao Liang, Li Jiang
ESNreram: An Energy-Efficient Sparse Neural Network Based on Resistive Random-Access Memory. ACM Great Lakes Symposium on VLSI (2020)
Chuxiong Lin, Weifeng He, Yanan Sun, Bingxi Pei, Zhigang Mao, Mingoo Seok
25.8 A Near- Threshold-Voltage Network-on-Chip with a Metastability Error Detection and Correction Technique for Supporting a Quad-Voltage/Frequency-Domain Ultra-Low-Power System-on-a-Chip. ISSCC (2020)
Chang Ma, Yanan Sun, Weikang Qian, Ziqi Meng, Rui Yang, Li Jiang
Go Unary: A Novel Synapse Coding and Mapping Scheme for Reliable ReRAM-based Neuromorphic Computing. DATE (2020)
Yanan Sun, Weifeng He, Zhigang Mao, Hailong Jiao, Volkan Kursun
Statistical Modeling and Design of a 16nm 9T SRAM Cell Considering Post-Synthesis Removal of Metallic Carbon-Nanotubes. ICEIC (2019)
Yanan Sun, Jiawei Gu, Weifeng He, Qin Wang, Naifeng Jing, Zhigang Mao, Weikang Qian, Li Jiang
Energy-Efficient Nonvolatile SRAM Design Based on Resistive Switching Multi-Level Cells. IEEE Trans. Circuits Syst. II Express Briefs (5) (2019)
Jiachen Jiang, Yanan Sun, Weifeng He, Zhigang Mao, Volkan Kursun
Carbon-Based Three-Dimensional SRAM Cell with Minimum Inter-Layer Area Skew Considering Process imperfections. ASICON (2019)
Yongjie Lu, Yanan Sun, Weifeng He, Zhigang Mao
A Novel Memristor-Reusable Mapping Methodology of In-memory Logic Implementation for High Area-Efficiency. NANOARCH (2019)
Pengfei Ji, Jing Gao, Wenyi Xu, Yanan Sun, Weifeng He, Hui Wu
Electronic-Photonic Integrated Circuit Design and Crosstalk Modeling for a High Density Multi-Lane MZM Array. ISCAS (2018)
Chen Wang, Yanan Sun, Shiyan Hu, Li Jiang, Weikang Qian
Variation-Aware Global Placement for Improving Timing-Yield of Carbon-Nanotube Field Effect Transistor Circuit. ACM Trans. Design Autom. Electr. Syst. 23 (4) (2018)
Wei Jin, Weifeng He, Jian-Fei Jiang, Haichao Huang, Xuejun Zhao, Yanan Sun, Xin Chen, Naifeng Jing
A 0.33 V 2.5 μW cross-point data-aware write structure, read-half-select disturb-free sub-threshold SRAM in 130 nm CMOS. Integr. 58 (2017)
Yanan Sun, Weifeng He, Zhigang Mao, Hailong Jiao, Volkan Kursun
Metallic-carbon-nanotube-removal tolerant SRAM cell with 9 transistors. ASICON (2017)
Ling Chen, Yanan Sun, Weifeng He
Low-power single-phase clocked redundant-transition-free flip-flop design with conditional charging scheme. ASICON (2017)
Yanan Sun, Weifeng He, Zhigang Mao, Volkan Kursun
Variable strength keeper for high-speed and low-leakage carbon nanotube domino logic. Microelectron. J. 62 (2017)
Naifeng Jing, Taozhong Li, Zhongyuan Zhao, Wei Jin, Yanan Sun, Weifeng He, Zhigang Mao
Enabling in-situ logic-in-memory capability using resistive-RAM crossbar memory. FPT (2016)
Yanan Sun, Hailong Jiao, Volkan Kursun
A Novel Robust and Low-Leakage SRAM Cell With Nine Carbon Nanotube Transistors. IEEE Trans. Very Large Scale Integr. Syst. 23 (9) (2015)
Yanan Sun, Volkan Kursun
Carbon-based sleep switch dynamic logic circuits with variable strength keeper for lower-leakage currents and higher-speed. ISCAS (2015)
Yanan Sun, Volkan Kursun
Carbon Nanotubes Blowing New Life Into NP Dynamic CMOS Circuits. IEEE Trans. Circuits Syst. I Regul. Pap. (2) (2014)
Yanan Sun, Hailong Jiao, Volkan Kursun
Low-leakage 9-CN-MOSFET SRAM cell with enhanced read and write voltage margins. ICM (2014)
Yanan Sun, Volkan Kursun
Low-power and compact NP dynamic CMOS adder with 16nm carbon nanotube transistors. ISCAS (2013)
Yanan Sun, Volkan Kursun
NP dynamic CMOS resurrection with carbon nanotube field effect transistors. ISOCC (2012)
Yanan Sun, Volkan Kursun
Uniform carbon nanotube diameter and nanoarray pitch for VLSI of 16nm P-channel MOSFETs. VLSI-SoC (2011)
Yanan Sun, Volkan Kursun
Leakage current and bottom gate voltage considerations in developing maximum performance 16nm N-channel carbon nanotube transistors. ISCAS (2011)