Leakage current and bottom gate voltage considerations in developing maximum performance 16nm N-channel carbon nanotube transistors.
Yanan SunVolkan KursunPublished in: ISCAS (2011)
Keyphrases
- leakage current
- low voltage
- cmos technology
- carbon nanotubes
- electrical properties
- silicon dioxide
- field effect transistors
- low power
- power line
- power consumption
- design considerations
- high density
- neural network
- space charge
- power management
- steady state
- parallel processing
- image sensor
- mathematical analysis
- low cost
- image processing