Mohamed Ali Belaïd

Publication Activity (10 Years)

Years Active: 2004-2024
Publications (10 Years): 5

Top Topics

Radio Frequency

Leakage Current

Conducted An Empirical Study

Top Venues

Microelectron. Reliab.

IET Circuits Devices Syst.

Microelectron. J.

Publications

Fathia Letaief, Mahmoud Hamouda, Mohamed Ali Belaïd, Kamal Al-Haddad
A Comprehensive Approach to Flexible LVRT Strategies for Inverter-Based PPMs Enhancing Voltage-Support, Overcurrent Protection, and DC-Link Voltage Quality. IEEE Access 12 (2024)
Mohamed Ali Belaïd, Ahmed Almusallam, Mohamed Masmoudi
RF performance reliability of power N-LDMOS under pulsed-RF aging life test in radar application S-band. IET Circuits Devices Syst. 14 (6) (2020)
Mohamed Ali Belaïd
Performance analysis of S-parameter in N-MOSFET devices after thermal accelerated tests. Microelectron. Reliab. 91 (2018)
Mohamed Ali Belaïd
Symptom reliability: S-parameters evaluation of power laterally diffused-metal-oxide-semiconductor field-effect transistor after pulsed-RF life tests for a radar application. IET Circuits Devices Syst. 12 (5) (2018)
Mohamed Ali Belaïd, H. Kaouach, Jaleleddine Ben Hadj Slama
Evolution study of the ElectroMagnetic Interference for RF LDMOS in series chopper application after thermal accelerated tests. Microelectron. Reliab. 64 (2016)
Mohamed Ali Belaïd
Impact of hot carrier injection on switching time evolution for power RF LDMOS after accelerated tests. Microelectron. Reliab. 55 (9-10) (2015)
Mohamed Ali Belaïd, M. Gares, K. Daoud, Olivier Latry
Performance drifts of N-MOSFETs under pulsed RF life test. Microelectron. Reliab. 54 (9-10) (2014)
Mohamed Ali Belaïd, Ahmed M. Nahhas, M. Gares, K. Daoud, Olivier Latry
Leakage current effects on N-MOSFETs after thermal ageing in pulsed life tests. Microelectron. J. 45 (12) (2014)
Mohamed Tlig, Jaleleddine Ben Hadj Slama, Mohamed Ali Belaïd
Conducted and radiated EMI evolution of power RF N-LDMOS after accelerated ageing tests. Microelectron. Reliab. 53 (9-11) (2013)
Mohamed Ali Belaïd, M. Gares, K. Daoud, Philippe Eudeline
Failure analysis of hot-electron effect on power RF N-LDMOS transistors. DTIS (2012)
Mohamed Ali Belaïd, M. Gares, K. Daoud, Philippe Eudeline
S-parameter performance degradation in power RF N-LDMOS devices due to hot carrier effects. Microelectron. Reliab. 51 (9-11) (2011)
Mohamed Ali Belaïd, K. Daoud
Evaluation of hot-electron effects on critical parameter drifts in power RF LDMOS transistors. Microelectron. Reliab. 50 (9-11) (2010)
Mohamed Ali Belaïd, K. Ketata, Karine Mourgues, M. Gares, Mohamed Masmoudi, Jérôme Marcon
Reliability study of power RF LDMOS device under thermal stress. Microelectron. J. 38 (2) (2007)
M. Gares, Mohamed Ali Belaïd, Hichame Maanane, Mohamed Masmoudi, Jérôme Marcon, Karine Mourgues, Philippe Eudeline
Study of hot-carrier effects on power RF LDMOS device reliability. Microelectron. Reliab. 47 (9-11) (2007)
Mohamed Ali Belaïd, K. Ketata, M. Gares, Karine Mourgues, Mohamed Masmoudi, Jérôme Marcon
Comparative analysis of RF LDMOS capacitance reliability under accelerated ageing tests. Microelectron. Reliab. 47 (1) (2007)
M. Gares, Hichame Maanane, Mohamed Masmoudi, Pierre Bertram, Jérôme Marcon, Mohamed Ali Belaïd, Karine Mourgues, C. Tolant, Philippe Eudeline
Hot carrier reliability of RF N- LDMOS for S Band radar application. Microelectron. Reliab. 46 (9-11) (2006)
Hichame Maanane, Mohamed Masmoudi, Jérôme Marcon, Mohamed Ali Belaïd, Karine Mourgues, C. Tolant, K. Ketata, Philippe Eudeline
LDMOS critical electrical parameter drifts after a thermal and electrical ageing in pulsed RF. Microelectron. Reliab. 46 (5-6) (2006)
M. Gares, Hichame Maanane, Mohamed Ali Belaïd, Mohamed Masmoudi, Jérôme Marcon, Karine Mourgues, Pierre Bertram, Philippe Eudeline
Impact de la Temperature sur la Fiabilite des Composants rf Ldmos de Puissance. CCECE (2006)
Mohamed Ali Belaïd, K. Ketata, Mohamed Masmoudi, M. Gares, Hichame Maanane, Jérôme Marcon
Electrical parameters degradation of power RF LDMOS device after accelerated ageing tests. Microelectron. Reliab. 46 (9-11) (2006)
Mohamed Ali Belaïd, K. Ketata, Karine Mourgues, Hichame Maanane, Mohamed Masmoudi, Jérôme Marcon
Comparative analysis of accelerated ageing effects on power RF LDMOS reliability. Microelectron. Reliab. 45 (9-11) (2005)
Hichame Maanane, Pierre Bertram, Jérôme Marcon, Mohamed Masmoudi, Mohamed Ali Belaïd, Karine Mourgues, Philippe Eudeline, K. Ketata
Reliability study of Power RF LDMOS for Radar Application. Microelectron. Reliab. 44 (9-11) (2004)