M. Gares

Publication Activity (10 Years)

Years Active: 2006-2014
Publications (10 Years): 0

Top Topics

Radio Frequency

Electrical Properties

Statistical Tests

Leakage Current

Top Venues

Microelectron. J.

Microelectron. Reliab.

Publications

Mohamed Ali Belaïd, M. Gares, K. Daoud, Olivier Latry
Performance drifts of N-MOSFETs under pulsed RF life test. Microelectron. Reliab. 54 (9-10) (2014)
Mohamed Ali Belaïd, Ahmed M. Nahhas, M. Gares, K. Daoud, Olivier Latry
Leakage current effects on N-MOSFETs after thermal ageing in pulsed life tests. Microelectron. J. 45 (12) (2014)
Mohamed Ali Belaïd, M. Gares, K. Daoud, Philippe Eudeline
Failure analysis of hot-electron effect on power RF N-LDMOS transistors. DTIS (2012)
Mohamed Ali Belaïd, M. Gares, K. Daoud, Philippe Eudeline
S-parameter performance degradation in power RF N-LDMOS devices due to hot carrier effects. Microelectron. Reliab. 51 (9-11) (2011)
Mohamed Ali Belaïd, K. Ketata, Karine Mourgues, M. Gares, Mohamed Masmoudi, Jérôme Marcon
Reliability study of power RF LDMOS device under thermal stress. Microelectron. J. 38 (2) (2007)
M. Gares, Mohamed Ali Belaïd, Hichame Maanane, Mohamed Masmoudi, Jérôme Marcon, Karine Mourgues, Philippe Eudeline
Study of hot-carrier effects on power RF LDMOS device reliability. Microelectron. Reliab. 47 (9-11) (2007)
Mohamed Ali Belaïd, K. Ketata, M. Gares, Karine Mourgues, Mohamed Masmoudi, Jérôme Marcon
Comparative analysis of RF LDMOS capacitance reliability under accelerated ageing tests. Microelectron. Reliab. 47 (1) (2007)
M. Gares, Hichame Maanane, Mohamed Masmoudi, Pierre Bertram, Jérôme Marcon, Mohamed Ali Belaïd, Karine Mourgues, C. Tolant, Philippe Eudeline
Hot carrier reliability of RF N- LDMOS for S Band radar application. Microelectron. Reliab. 46 (9-11) (2006)
M. Gares, Hichame Maanane, Mohamed Ali Belaïd, Mohamed Masmoudi, Jérôme Marcon, Karine Mourgues, Pierre Bertram, Philippe Eudeline
Impact de la Temperature sur la Fiabilite des Composants rf Ldmos de Puissance. CCECE (2006)
Mohamed Ali Belaïd, K. Ketata, Mohamed Masmoudi, M. Gares, Hichame Maanane, Jérôme Marcon
Electrical parameters degradation of power RF LDMOS device after accelerated ageing tests. Microelectron. Reliab. 46 (9-11) (2006)