Olivier Latry

Publication Activity (10 Years)

Years Active: 2008-2020
Publications (10 Years): 5

Top Topics

Leakage Current

Structuring Elements

Top Venues

Microelectron. Reliab.

Comput. Electr. Eng.

Microelectron. J.

Publications

Al Mehdi Bouchour, Ahmed El Oualkadi, Olivier Latry, Pascal Dherbécourt, Andres F. Echeverri
Estimation of losses of GaN HEMT in power switching applications based on experimental characterization. Comput. Electr. Eng. 84 (2020)
Safa Mbarek, Pascal Dherbécourt, Olivier Latry, F. Fouquet
Short-circuit robustness test and in depth microstructural analysis study of SiC MOSFET. Microelectron. Reliab. (2017)
N. Moultif, Eric Joubert, M. Masmoudi, Olivier Latry
Characterization of HTRB stress effects on SiC MOSFETs using photon emission spectral signatures. Microelectron. Reliab. (2017)
Alexis Divay, Cedric Duperrier, Farid Temcamani, Olivier Latry
Effects of drain quiescent voltage on the ageing of AlGaN/GaN HEMT devices in pulsed RF mode. Microelectron. Reliab. 64 (2016)
Safa Mbarek, F. Fouquet, Pascal Dherbécourt, Mohamed Masmoudi, Olivier Latry
Gate oxide degradation of SiC MOSFET under short-circuit aging tests. Microelectron. Reliab. 64 (2016)
Alexis Divay, Mohamed Masmoudi, Olivier Latry, Cedric Duperrier, Farid Temcamani
An athermal measurement technique for long time constants traps characterization in GaN HEMT transistors. Microelectron. Reliab. 55 (9-10) (2015)
Pascal Dherbécourt, Olivier Latry, Eric Joubert, Karine Dehais-Mourgues, Hichame Maanane, Jean Pierre Sipma, Philippe Eudeline
A workbench development for L-band LDMOS amplifier reliability study (electronic power transistors reliabilty for radar applications). ICMCS (2014)
Jean-Baptiste Fonder, Olivier Latry, Farid Temcamani, Cedric Duperrier
Channel temperature estimation of AlGaN/GaN HEMT for pulsed RADAR applications using infrared thermography and electrical characterization. ICMCS (2014)
Mohamed Ali Belaïd, M. Gares, K. Daoud, Olivier Latry
Performance drifts of N-MOSFETs under pulsed RF life test. Microelectron. Reliab. 54 (9-10) (2014)
Mohamed Ali Belaïd, Ahmed M. Nahhas, M. Gares, K. Daoud, Olivier Latry
Leakage current effects on N-MOSFETs after thermal ageing in pulsed life tests. Microelectron. J. 45 (12) (2014)
Jean-Baptiste Fonder, Laetitia Chevalier, Cédric Genevois, Olivier Latry, Cedric Duperrier, Farid Temcamani, Hichame Maanane
Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test. Microelectron. Reliab. 52 (9-10) (2012)
Jean-Baptiste Fonder, Olivier Latry, Cedric Duperrier, M. Stanislawiak, Hichame Maanane, Philippe Eudeline, Farid Temcamani
Compared deep class-AB and class-B ageing on AlGaN/GaN HEMT in S-Band pulsed-RF operating life. Microelectron. Reliab. 52 (11) (2012)
Loïc Lachèze, Olivier Latry, Pascal Dherbécourt, Karine Mourgues, V. Purohit, Hichame Maanane, Jean Pierre Sipma, F. Cornu, Philippe Eudeline
Characterization and modeling of hot carrier injection in LDMOS for L-band radar application. Microelectron. Reliab. 51 (8) (2011)
Olivier Latry, Pascal Dherbécourt, Karine Mourgues, Hichame Maanane, Jean Pierre Sipma, F. Cornu, Philippe Eudeline, Mohamed Masmoudi
A 5000 h RF life test on 330 W RF-LDMOS transistors for radars applications. Microelectron. Reliab. 50 (9-11) (2010)
Guillaume Ducournau, Olivier Latry, Eric Joubert, Mohamed Ketata
Comparison of different feedback signals used in one stage PMD compensators for different modulation formats. IEEE Trans. Commun. 56 (10) (2008)