Philippe Eudeline

Publication Activity (10 Years)

Years Active: 2004-2014
Publications (10 Years): 0

Top Topics

Power Consumption

Clustering Algorithm

Top Venues

Microelectron. Reliab.

Publications

Pascal Dherbécourt, Olivier Latry, Eric Joubert, Karine Dehais-Mourgues, Hichame Maanane, Jean Pierre Sipma, Philippe Eudeline
A workbench development for L-band LDMOS amplifier reliability study (electronic power transistors reliabilty for radar applications). ICMCS (2014)
Mohamed Ali Belaïd, M. Gares, K. Daoud, Philippe Eudeline
Failure analysis of hot-electron effect on power RF N-LDMOS transistors. DTIS (2012)
Jean-Baptiste Fonder, Olivier Latry, Cedric Duperrier, M. Stanislawiak, Hichame Maanane, Philippe Eudeline, Farid Temcamani
Compared deep class-AB and class-B ageing on AlGaN/GaN HEMT in S-Band pulsed-RF operating life. Microelectron. Reliab. 52 (11) (2012)
Mohamed Ali Belaïd, M. Gares, K. Daoud, Philippe Eudeline
S-parameter performance degradation in power RF N-LDMOS devices due to hot carrier effects. Microelectron. Reliab. 51 (9-11) (2011)
Loïc Lachèze, Olivier Latry, Pascal Dherbécourt, Karine Mourgues, V. Purohit, Hichame Maanane, Jean Pierre Sipma, F. Cornu, Philippe Eudeline
Characterization and modeling of hot carrier injection in LDMOS for L-band radar application. Microelectron. Reliab. 51 (8) (2011)
Olivier Latry, Pascal Dherbécourt, Karine Mourgues, Hichame Maanane, Jean Pierre Sipma, F. Cornu, Philippe Eudeline, Mohamed Masmoudi
A 5000 h RF life test on 330 W RF-LDMOS transistors for radars applications. Microelectron. Reliab. 50 (9-11) (2010)
M. Gares, Mohamed Ali Belaïd, Hichame Maanane, Mohamed Masmoudi, Jérôme Marcon, Karine Mourgues, Philippe Eudeline
Study of hot-carrier effects on power RF LDMOS device reliability. Microelectron. Reliab. 47 (9-11) (2007)
M. Gares, Hichame Maanane, Mohamed Masmoudi, Pierre Bertram, Jérôme Marcon, Mohamed Ali Belaïd, Karine Mourgues, C. Tolant, Philippe Eudeline
Hot carrier reliability of RF N- LDMOS for S Band radar application. Microelectron. Reliab. 46 (9-11) (2006)
Hichame Maanane, Mohamed Masmoudi, Jérôme Marcon, Mohamed Ali Belaïd, Karine Mourgues, C. Tolant, K. Ketata, Philippe Eudeline
LDMOS critical electrical parameter drifts after a thermal and electrical ageing in pulsed RF. Microelectron. Reliab. 46 (5-6) (2006)
M. Gares, Hichame Maanane, Mohamed Ali Belaïd, Mohamed Masmoudi, Jérôme Marcon, Karine Mourgues, Pierre Bertram, Philippe Eudeline
Impact de la Temperature sur la Fiabilite des Composants rf Ldmos de Puissance. CCECE (2006)
Hichame Maanane, Pierre Bertram, Jérôme Marcon, Mohamed Masmoudi, Mohamed Ali Belaïd, Karine Mourgues, Philippe Eudeline, K. Ketata
Reliability study of Power RF LDMOS for Radar Application. Microelectron. Reliab. 44 (9-11) (2004)