K. Ketata

Publication Activity (10 Years)

Years Active: 2004-2007
Publications (10 Years): 0

Publications

M. Alwan, B. Beydoun, K. Ketata, M. Zoaeter
Bias temperature instability from gate charge characteristics investigations in N-Channel Power MOSFET. Microelectron. J. 38 (6-7) (2007)
Mohamed Ali Belaïd, K. Ketata, Karine Mourgues, M. Gares, Mohamed Masmoudi, Jérôme Marcon
Reliability study of power RF LDMOS device under thermal stress. Microelectron. J. 38 (2) (2007)
Mohamed Ali Belaïd, K. Ketata, M. Gares, Karine Mourgues, Mohamed Masmoudi, Jérôme Marcon
Comparative analysis of RF LDMOS capacitance reliability under accelerated ageing tests. Microelectron. Reliab. 47 (1) (2007)
M. Alwan, B. Beydoun, K. Ketata, M. Zoaeter
Gate charge behaviors in N-channel power VDMOSFETs during HEF and PBT stresses. Microelectron. Reliab. 47 (9-11) (2007)
Hichame Maanane, Mohamed Masmoudi, Jérôme Marcon, Mohamed Ali Belaïd, Karine Mourgues, C. Tolant, K. Ketata, Philippe Eudeline
LDMOS critical electrical parameter drifts after a thermal and electrical ageing in pulsed RF. Microelectron. Reliab. 46 (5-6) (2006)
Mohamed Ali Belaïd, K. Ketata, Mohamed Masmoudi, M. Gares, Hichame Maanane, Jérôme Marcon
Electrical parameters degradation of power RF LDMOS device after accelerated ageing tests. Microelectron. Reliab. 46 (9-11) (2006)
Mohamed Ali Belaïd, K. Ketata, Karine Mourgues, Hichame Maanane, Mohamed Masmoudi, Jérôme Marcon
Comparative analysis of accelerated ageing effects on power RF LDMOS reliability. Microelectron. Reliab. 45 (9-11) (2005)
Hichame Maanane, Pierre Bertram, Jérôme Marcon, Mohamed Masmoudi, Mohamed Ali Belaïd, Karine Mourgues, Philippe Eudeline, K. Ketata
Reliability study of Power RF LDMOS for Radar Application. Microelectron. Reliab. 44 (9-11) (2004)