Alexandre Sarafianos

Publication Activity (10 Years)

Years Active: 2012-2022
Publications (10 Years): 3

Top Topics

Expectation Maximisation

Fault Injection

Integrated Circuit

Top Venues

Microelectron. Reliab.

Publications

Davide Poggi, Thomas Ordas, Alexandre Sarafianos, Philippe Maurine
Checking Robustness Against EM Side-Channel Attacks Prior to Manufacturing. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 41 (5) (2022)
Davide Poggi, Philippe Maurine, Thomas Ordas, Alexandre Sarafianos
Protecting Secure ICs Against Side-Channel Attacks by Identifying and Quantifying Potential EM and Leakage Hotspots at Simulation Stage. COSADE (2021)
Davide Poggi, Philippe Maurine, Thomas Ordas, Alexandre Sarafianos, Jeremy Raoult
Finding EM leakages at design stage: a simulation methodology. IACR Cryptol. ePrint Arch. 2020 (2020)
Nicolas Borrel, Clement Champeix, Edith Kussener, Wenceslas Rahajandraibe, Mathieu Lisart, Jean-Max Dutertre, Alexandre Sarafianos
Electrical model of an inverter body-biased structure in triple-well technology under pulsed photoelectric laser stimulation. Microelectron. Reliab. 55 (9-10) (2015)
Nicolas Borrel, Clement Champeix, Edith Kussener, Wenceslas Rahajandraibe, Mathieu Lisart, Alexandre Sarafianos, Jean-Max Dutertre
Influence of triple-well technology on laser fault injection and laser sensor efficiency. DFTS (2015)
Nicolas Borrel, Clement Champeix, Mathieu Lisart, Alexandre Sarafianos, Edith Kussener, Wenceslas Rahajandraibe, Jean-Max Dutertre
Electrical model of an NMOS body biased structure in triple-well technology under photoelectric laser stimulation. IRPS (2015)
Marc Lacruche, Nicolas Borrel, Clement Champeix, Cyril Roscian, Alexandre Sarafianos, Jean-Baptiste Rigaud, Jean-Max Dutertre, Edith Kussener
Laser fault injection into SRAM cells: Picosecond versus nanosecond pulses. IOLTS (2015)
Clement Champeix, Nicolas Borrel, Jean-Max Dutertre, Bruno Robisson, Mathieu Lisart, Alexandre Sarafianos
Experimental validation of a Bulk Built-In Current Sensor for detecting laser-induced currents. IOLTS (2015)
Clement Champeix, Nicolas Borrel, Jean-Max Dutertre, Bruno Robisson, Mathieu Lisart, Alexandre Sarafianos
SEU sensitivity and modeling using pico-second pulsed laser stimulation of a D Flip-Flop in 40 nm CMOS technology. DFTS (2015)
Régis Leveugle, Paolo Maistri, Pierre Vanhauwaert, Feng Lu, Giorgio Di Natale, Marie-Lise Flottes, Bruno Rouzeyre, Athanasios Papadimitriou, David Hély, Vincent Beroulle, Guillaume Hubert, Stephan De Castro, Jean-Max Dutertre, Alexandre Sarafianos, Noemie Boher, Mathieu Lisart, Joel Damiens, Philippe Candelier, Clément Tavernier
Laser-induced fault effects in security-dedicated circuits. VLSI-SoC (2014)
Jean-Max Dutertre, Stephan De Castro, Alexandre Sarafianos, Noemie Boher, Bruno Rouzeyre, Mathieu Lisart, Joel Damiens, Philippe Candelier, Marie-Lise Flottes, Giorgio Di Natale
Laser attacks on integrated circuits: From CMOS to FD-SOI. DTIS (2014)
Jean-Max Dutertre, Rodrigo Possamai Bastos, Olivier Potin, Marie-Lise Flottes, Bruno Rouzeyre, Giorgio Di Natale, Alexandre Sarafianos
Improving the ability of Bulk Built-In Current Sensors to detect Single Event Effects by using triple-well CMOS. Microelectron. Reliab. 54 (9-10) (2014)
Cyril Roscian, Alexandre Sarafianos, Jean-Max Dutertre, Assia Tria
Fault Model Analysis of Laser-Induced Faults in SRAM Memory Cells. FDTC (2013)
Alexandre Sarafianos, Cyril Roscian, Jean-Max Dutertre, Mathieu Lisart, Assia Tria
Electrical modeling of the photoelectric effect induced by a pulsed laser applied to an SRAM cell. Microelectron. Reliab. 53 (9-11) (2013)
Alexandre Sarafianos, Mathieu Lisart, Olivier Gagliano, Valerie Serradeil, Cyril Roscian, Jean-Max Dutertre, Assia Tria
Robustness improvement of an SRAM cell against laser-induced fault injection. DFTS (2013)
Alexandre Sarafianos, Roxane Llido, Jean-Max Dutertre, Olivier Gagliano, Valerie Serradeil, Mathieu Lisart, Vincent Goubier, Assia Tria, Vincent Pouget, Dean Lewis
Building the electrical model of the Photoelectric Laser Stimulation of a PMOS transistor in 90 nm technology. Microelectron. Reliab. 52 (9-10) (2012)