Ku-Feng Lin

Publication Activity (10 Years)

Years Active: 2010-2024
Publications (10 Years): 3

Top Topics

Data Aggregation

Multi Core Architecture

Top Venues

IEEE J. Solid State Circuits

Publications

Ku-Feng Lin, Hiroki Noguchi, Yi-Chun Shih, Perng-Fei Yuh, Yuan-Jen Lee, Tung-Cheng Chang, Sheng-Po Huang, Yu-Fan Lin, Chun-Ying Lee, Yen-Hsiang Huang, Jui-Che Tsai, Saman Adham, Peter Noel, Ramin Yazdi, Marat Gershoig, YangJae Shin, Vineet Joshi, Ted Wong, Meng-Ru Jiang, J. J. Wu, Chun-Tai Cheng, Yu-Jen Wang, Harry Chuang, Yu-Der Chih, Yih Wang, Tsung-Yung Jonathan Chang
Write Endurance and Integrated Margin-Expansion Schemes. ISSCC (2024)
Yi-Chun Shih, Chia-Fu Lee, Yen-An Chang, Po-Hao Lee, Hon-Jarn Lin, Yu-Lin Chen, Ku-Feng Lin, Ta-Ching Yeh, Hung-Chang Yu, Harry Chuang, Yu-Der Chih, Tsung-Yung Jonathan Chang
Logic Process Compatible 40-nm 16-Mb, Embedded Perpendicular-MRAM With Hybrid-Resistance Reference, Sub- $\mu$ A Sensing Resolution, and 17.5-nS Read Access Time. IEEE J. Solid State Circuits 54 (4) (2019)
Yi-Chun Shih, Chia-Fu Lee, Yen-An Chang, Po-Hao Lee, Hon-Jarn Lin, Yu-Lin Chen, Ku-Feng Lin, Ta-Ching Yeh, Hung-Chang Yu, Harry Chuang, Yu-Der Chih, Tsung-Yung Jonathan Chang
Logic Process Compatible 40NM 16MB, Embedded Perpendicular-MRAM with Hybrid-Resistance Reference, Sub-μA Sensing Resolution, and 17.5NS Read Access Time. VLSI Circuits (2018)
Meng-Fan Chang, Jui-Jen Wu, Tun-Fei Chien, Yen-Chen Liu, Ting-Chin Yang, Wen-Chao Shen, Ya-Chin King, Chrong Jung Lin, Ku-Feng Lin, Yu-Der Chih, Tsung-Yung Jonathan Chang
Low VDDmin Swing-Sample-and-Couple Sense Amplifier and Energy-Efficient Self-Boost-Write-Termination Scheme for Embedded ReRAM Macros Against Resistance and Switch-Time Variations. IEEE J. Solid State Circuits 50 (11) (2015)
Meng-Fan Chang, Jui-Jen Wu, Tun-Fei Chien, Yen-Chen Liu, Ting-Chin Yang, Wen-Chao Shen, Ya-Chin King, Chorng-Jung Lin, Ku-Feng Lin, Yu-Der Chih, Sreedhar Natarajan, Tsung-Yung Jonathan Chang
19.4 embedded 1Mb ReRAM in 28nm CMOS with 0.27-to-1V read using swing-sample-and-couple sense amplifier and self-boost-write-termination scheme. ISSCC (2014)
Hung-Chang Yu, Kai-Chun Lin, Ku-Feng Lin, Chin-Yi Huang, Yu-Der Chih, Tong-Chern Ong, Tsung-Yung Jonathan Chang, Sreedhar Natarajan, Luan C. Tran
Cycling endurance optimization scheme for 1Mb STT-MRAM in 40nm technology. ISSCC (2013)
Meng-Fan Chang, Shyh-Shyuan Sheu, Ku-Feng Lin, Che-Wei Wu, Chia-Chen Kuo, Pi-Feng Chiu, Yih-Shan Yang, Yu-Sheng Chen, Heng-Yuan Lee, Chen-Hsin Lien, Frederick T. Chen, Keng-Li Su, Tzu-Kun Ku, Ming-Jer Kao, Ming-Jinn Tsai
A High-Speed 7.2-ns Read-Write Random Access 4-Mb Embedded Resistive RAM (ReRAM) Macro Using Process-Variation-Tolerant Current-Mode Read Schemes. IEEE J. Solid State Circuits 48 (3) (2013)
Meng-Fan Chang, Che-Wei Wu, Chia-Chen Kuo, Shin-Jang Shen, Sue-Meng Yang, Ku-Feng Lin, Wen-Chao Shen, Ya-Chin King, Chorng-Jung Lin, Yu-Der Chih
A Low-Voltage Bulk-Drain-Driven Read Scheme for Sub-0.5 V 4 Mb 65 nm Logic-Process Compatible Embedded Resistive RAM (ReRAM) Macro. IEEE J. Solid State Circuits 48 (9) (2013)
Hung-Chang Yu, Ku-Feng Lin, Kai-Chun Lin, Yu-Der Chih, Sreedhar Natarajan
A 180 MHz direct access read 4.6Mb embedded flash in 90nm technology operating under wide range power supply from 2.1V to 3.6V. VLSI-DAT (2013)
Meng-Fan Chang, Che-Wei Wu, Chia-Chen Kuo, Shin-Jang Shen, Ku-Feng Lin, Shu-Meng Yang, Ya-Chin King, Chorng-Jung Lin, Yu-Der Chih
A 0.5V 4Mb logic-process compatible embedded resistive RAM (ReRAM) in 65nm CMOS using low-voltage current-mode sensing scheme with 45ns random read time. ISSCC (2012)
Shyh-Shyuan Sheu, Meng-Fan Chang, Ku-Feng Lin, Che-Wei Wu, Yu-Sheng Chen, Pi-Feng Chiu, Chia-Chen Kuo, Yih-Shan Yang, Pei-Chia Chiang, Wen-Pin Lin, Che-He Lin, Heng-Yuan Lee, Peiyi Gu, Sumin Wang, Frederick T. Chen, Keng-Li Su, Chen-Hsin Lien, Kuo-Hsing Cheng, Hsin-Tun Wu, Tzu-Kun Ku, Ming-Jer Kao, Ming-Jinn Tsai
A 4Mb embedded SLC resistive-RAM macro with 7.2ns read-write random-access time and 160ns MLC-access capability. ISSCC (2011)
Meng-Fan Chang, Shu-Meng Yang, Chih-Wei Liang, Chih-Chyuang Chiang, Pi-Feng Chiu, Ku-Feng Lin, Yuan-Hua Chu, Wen-Chin Wu, Hiroyuki Yamauchi
A 0.29V embedded NAND-ROM in 90nm CMOS for ultra-low-voltage applications. ISSCC (2010)
Meng-Fan Chang, Shu-Meng Yang, Chih-Wei Liang, Chih-Chyuang Chiang, Pi-Feng Chiu, Ku-Feng Lin
Noise-Immune Embedded NAND-ROM Using a Dynamic Split Source-Line Scheme for VDDmin and Speed Improvements. IEEE J. Solid State Circuits 45 (10) (2010)