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A 0.5V 4Mb logic-process compatible embedded resistive RAM (ReRAM) in 65nm CMOS using low-voltage current-mode sensing scheme with 45ns random read time.

Meng-Fan ChangChe-Wei WuChia-Chen KuoShin-Jang ShenKu-Feng LinShu-Meng YangYa-Chin KingChorng-Jung LinYu-Der Chih
Published in: ISSCC (2012)
Keyphrases
  • low voltage
  • random access memory
  • cmos technology
  • design considerations
  • power line
  • power consumption
  • power management
  • low cost
  • low power
  • real time
  • high speed
  • design process
  • embedded systems