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A 0.29V embedded NAND-ROM in 90nm CMOS for ultra-low-voltage applications.
Meng-Fan Chang
Shu-Meng Yang
Chih-Wei Liang
Chih-Chyuang Chiang
Pi-Feng Chiu
Ku-Feng Lin
Yuan-Hua Chu
Wen-Chin Wu
Hiroyuki Yamauchi
Published in:
ISSCC (2010)
Keyphrases
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low voltage
cmos technology
low power
leakage current
high speed
power line
design considerations
low power consumption
embedded systems
power consumption
silicon on insulator
power management
parallel processing
low cost
random access memory
flash memory
power dissipation
mixed signal
database systems
real time