A Low-Voltage Bulk-Drain-Driven Read Scheme for Sub-0.5 V 4 Mb 65 nm Logic-Process Compatible Embedded Resistive RAM (ReRAM) Macro.
Meng-Fan ChangChe-Wei WuChia-Chen KuoShin-Jang ShenSue-Meng YangKu-Feng LinWen-Chao ShenYa-Chin KingChorng-Jung LinYu-Der ChihPublished in: IEEE J. Solid State Circuits (2013)