Bo Li

Publication Activity (10 Years)

Years Active: 2012-2024
Publications (10 Years): 20

Top Topics

Metal Oxide Semiconductor

Air Conditioning

Integrated Circuit

Top Venues

Microelectron. J.

Microelectron. Reliab.

Sci. China Inf. Sci.

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.

Publications

Jianying Dang, Xiaowu Cai, Longli Pan, Liang Shan, Yu Lu, Yafei Xie, Xupeng Wang, Shiping Wang, Bo Li
A Novel Reliability-Enhanced Dual Over-Temperature Protection Circuit With Delayed Thermal Restart for Power ICs. IEEE Trans. Circuits Syst. II Express Briefs 71 (3) (2024)
Tian Han, Fazhan Zhao, Ximing Fu, Xiaowu Cai, Weiwei Yan, Haitao Zhao, Wenxin Zhao, Bo Li
A precision current sensing circuit with chopper amplifier of symmetric topology. Microelectron. J. 146 (2024)
Yafei Xie, Xiaowu Cai, Yu Lu, Jianying Dang, Longli Pan, Mali Gao, Lei Wang, Bo Li
An integrated capacitor-less LDO with transient and stability enhancement. IEICE Electron. Express 21 (2024)
Tian Han, Fazhan Zhao, Xiaowu Cai, Liang Shan, Yun Tang, Bo Li
Novel SenseFET structure for VDMOS with adopting body reverse bias technique to adjust the reference current ratio. Microelectron. J. 134 (2023)
Ruirui Xia, Xiaowu Cai, Liqiang Ding, Mali Gao, Yuexin Gao, Tian Han, Jianying Dang, Bo Li
An on-chip integrated current sensor with high precision and large current range for smart power ICs. Microelectron. J. 134 (2023)
Shuo Cai, Yan Wen, Jiangbiao Ouyang, Weizheng Wang, Fei Yu, Bo Li
A highly reliable and low-power cross-coupled 18T SRAM cell. Microelectron. J. 134 (2023)
Yuchong Wang, Siyuan Chen, Fanyu Liu, Bo Li, Jiangjiang Li, Yang Huang, Tiexin Zhang, Xu Zhang, Zhengsheng Han, Tianchun Ye, Jing Wan
The Effects of $\gamma$ Radiation-Induced Trapped Charges on Single Event Transient in DSOI Technology. IRPS (2023)
Fayu Wan, Taochen Gu, Binhong Li, Bo Li, Wenceslas Rahajandraibe, Mathieu Guerin, Sébastien Lalléchère, Blaise Ravelo
Design and Experimentation of Inductorless Low-Pass NGD Integrated Circuit in 180-nm CMOS Technology. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 41 (11) (2022)
Jianjian Wang, Jinshun Bi, Gang Liu, Hua Bai, Kai Xi, Bo Li, Sandip Majumdar, Lanlong Ji, Ming Liu, Zhangang Zhang
Simulations of single event effects on the ferroelectric capacitor-based non-volatile SRAM design. Sci. China Inf. Sci. 64 (4) (2021)
Konstantin O. Petrosyants, Lev M. Sambursky, Maxim V. Kozhukhov, Mamed R. Ismail-Zade, Igor A. Kharitonov, Bo Li
SPICE Compact BJT, MOSFET, and JFET Models for ICs Simulation in the Wide Temperature Range (From -200 °C to +300 °C). IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 40 (4) (2021)
Gangping Yan, Jinshun Bi, Gaobo Xu, Kai Xi, Bo Li, Linjie Fan, Huaxiang Yin
Simulation of Total Ionizing Dose (TID) Effects Mitigation Technique for 22 nm Fully-Depleted Silicon-on-Insulator (FDSOI) Transistor. IEEE Access 8 (2020)
Shuo Cai, Binyong He, Weizheng Wang, Peng Liu, Fei Yu, Lairong Yin, Bo Li
Soft Error Reliability Evaluation of Nanoscale Logic Circuits in the Presence of Multiple Transient Faults. J. Electron. Test. 36 (4) (2020)
Linjie Fan, Jinshun Bi, Kai Xi, Sandip Majumdar, Bo Li
Performance Optimization of FD-SOI Hall Sensors Via 3D TCAD Simulations. Sensors 20 (10) (2020)
Kai Xi, Jinshun Bi, Sandip Majumdar, Bo Li, Jing Liu, Yannan Xu, Ming Liu
Total ionizing dose effects on graphene-based charge-trapping memory. Sci. China Inf. Sci. 62 (12) (2019)
Zhongshan Zheng, Zhentao Li, Bo Li, Jiajun Luo, Zhengsheng Han
Influences of the Source and Drain Resistance of the MOSFETs on the Single Event Upset Hardness of SRAM cells. ASICON (2019)
Binhong Li, Yang Huang, Jianfei Wu, Yunbo Huang, Bo Li, Qingzhu Zhang, Ling Yang, Fayu Wan, Jiajun Luo, Zhengsheng Han, Huaxiang Yin
Constant voltage stress characterization of nFinFET transistor during total ionizing dose experiment. Microelectron. Reliab. (2018)
Haibin Wang, Xixi Dai, Yangsheng Wang, Issam Nofal, Li Cai, Zicai Shen, Wanxiu Sun, Jinshun Bi, Bo Li, Gang Guo, Li Chen, Sang H. Baeg
A single event upset tolerant latch design. Microelectron. Reliab. (2018)
Bo Li, Yunbo Huang, Ling Yang, Qingzhu Zhang, Zhongshan Zheng, Binhong Li, Huiping Zhu, Jianhui Bu, Huaxiang Yin, Jiajun Luo, Zhengsheng Han, Haibin Wang
Process variation dependence of total ionizing dose effects in bulk nFinFETs. Microelectron. Reliab. (2018)
Jinshun Bi, Yuan Duan, Kai Xi, Bo Li
-based resistive-random-access memory. Microelectron. Reliab. (2018)
Yannan Xu, Jinshun Bi, Gaobo Xu, Kai Xi, Bo Li, Ming Liu
-based MOS capacitor. Sci. China Inf. Sci. 60 (12) (2017)
Bo Li, Xuefang Lin-Shi, Bruno Allard
Low Power Digital Alternative to Analog Control of Step-Down Converter. J. Low Power Electron. 8 (5) (2012)
Bo Li, Xuefang Lin-Shi, Bruno Allard, Jean-Marie Retif
An FPGA prototype of current and voltage predictive controller for high switching frequency buck converter. IECON (2012)
Bo Li, Xuefang Lin-Shi, Bruno Allard, Jean-Marie Retif
A Digital Dual-State-Variable Predictive Controller for High Switching Frequency Buck Converter With Improved Σ-Δ DPWM. IEEE Trans. Ind. Informatics 8 (3) (2012)