Xiaowu Cai

Publication Activity (10 Years)

Years Active: 2013-2024
Publications (10 Years): 7

Top Topics

Transient Response

Dc Dc Converter

Top Venues

Microelectron. J.

IEICE Electron. Express

IEEE Trans. Circuits Syst. II Express Briefs

Publications

Jianying Dang, Xiaowu Cai, Longli Pan, Liang Shan, Yu Lu, Yafei Xie, Xupeng Wang, Shiping Wang, Bo Li
A Novel Reliability-Enhanced Dual Over-Temperature Protection Circuit With Delayed Thermal Restart for Power ICs. IEEE Trans. Circuits Syst. II Express Briefs 71 (3) (2024)
Tian Han, Fazhan Zhao, Ximing Fu, Xiaowu Cai, Weiwei Yan, Haitao Zhao, Wenxin Zhao, Bo Li
A precision current sensing circuit with chopper amplifier of symmetric topology. Microelectron. J. 146 (2024)
Yafei Xie, Xiaowu Cai, Yu Lu, Jianying Dang, Longli Pan, Mali Gao, Lei Wang, Bo Li
An integrated capacitor-less LDO with transient and stability enhancement. IEICE Electron. Express 21 (2024)
Liqiang Ding, Xiaowu Cai, Mali Gao, Ruirui Xia, Yuexin Gao
A high reliability under-voltage lock out circuit for power driver IC. Integr. 88 (2023)
Tian Han, Fazhan Zhao, Xiaowu Cai, Liang Shan, Yun Tang, Bo Li
Novel SenseFET structure for VDMOS with adopting body reverse bias technique to adjust the reference current ratio. Microelectron. J. 134 (2023)
Ruirui Xia, Xiaowu Cai, Liqiang Ding, Mali Gao, Yuexin Gao, Tian Han, Jianying Dang, Bo Li
An on-chip integrated current sensor with high precision and large current range for smart power ICs. Microelectron. J. 134 (2023)
Mali Gao, Xiaowu Cai, Weiwei Yan, Haitao Zhao, Ruirui Xia, Yuexin Gao
A wide input range, external capacitor-less LDO with fast transient response. IEICE Electron. Express 20 (7) (2023)
Xiaowu Cai, Junxiu Wei, Chao Liang, Zhe Gao, Chuan Lv
Investigation of high voltage SCR-LDMOS ESD device for 150 V SOI BCD process. Microelectron. Reliab. 53 (6) (2013)