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Influences of the Source and Drain Resistance of the MOSFETs on the Single Event Upset Hardness of SRAM cells.

Zhongshan ZhengZhentao LiBo LiJiajun LuoZhengsheng Han
Published in: ASICON (2019)
Keyphrases
  • event detection
  • np hard
  • single source
  • data sources
  • worst case
  • parallel processing
  • low power