Zhengsheng Han

Publication Activity (10 Years)

Years Active: 2011-2024
Publications (10 Years): 16

Top Topics

Decreasing Function

Event Recognition

Stationary Points

Top Venues

IEICE Electron. Express

Microelectron. Reliab.

Publications

Junyan Zhu, Jiang Cao, Chen Song, Bo Li, Zhengsheng Han
Jiezi: An open-source Python software for simulating quantum transport based on non-equilibrium Green's function formalism. Comput. Phys. Commun. 302 (2024)
Zexin Su, Bo Li, Chang Liu, Xiaohui Su, Qian Luo, Hongyu Ren, Zhengsheng Han
SRAM-Based PUF with Noise Immunity Achieving 0.58% Native BER in 55-nm CMOS. ISCAS (2024)
Xinyi Zhang, Kewei Wang, Fang Wang, Jiangjiang Li, Zhicheng Wu, Duoli Li, Bo Li, Jianhui Bu, Zhengsheng Han
Influence of Back Gate Bias on the Hot Carrier Reliability of DSOI nMOSFET. IRPS (2023)
Yuchong Wang, Siyuan Chen, Fanyu Liu, Bo Li, Jiangjiang Li, Yang Huang, Tiexin Zhang, Xu Zhang, Zhengsheng Han, Tianchun Ye, Jing Wan
The Effects of $\gamma$ Radiation-Induced Trapped Charges on Single Event Transient in DSOI Technology. IRPS (2023)
Xuwei Lin, Weizhong Chen, Haifeng Qin, Hongsheng Zhang, Zhengsheng Han
A snapback-free RC-LIGBT with separated LIGBT and FWD. IEICE Electron. Express 19 (17) (2022)
Fei Hu, Limei Song, Zhengsheng Han, Jiajun Luo
Snapback-free base resistance controlled thyristor with floating N-region. IEICE Electron. Express 16 (21) (2019)
Yangyang Li, Xiaojing Li, Bo Li, Linchun Gao, Weiwei Yan, Fangfang Wang, Duoli Li, Chuanbin Zeng, Jiajun Luo, Zhengsheng Han
Effect of Radiation on Interface Traps of SOI NMOSFETs by the Direct-Current Current-Voltage Technique. IEEE Access 7 (2019)
Weizhong Chen, Yao Huang, Shun Li, Lingli Wang, Lijun He, Yi Huang, Zhengsheng Han
layer. IEICE Electron. Express 16 (19) (2019)
Zhongshan Zheng, Zhentao Li, Bo Li, Jiajun Luo, Zhengsheng Han
Influences of the Source and Drain Resistance of the MOSFETs on the Single Event Upset Hardness of SRAM cells. ASICON (2019)
Weizhong Chen, Yao Huang, Shun Li, Yi Huang, Zhengsheng Han
A Snapback-Free and Low-Loss RC-IGBT With Lateral FWD Integrated in the Terminal Region. IEEE Access 7 (2019)
Fei Hu, Limei Song, Zhengsheng Han, Huan Du, Jiajun Luo
A new snapback-free base resistance controlled thyristor with semi-superjunction. IEICE Electron. Express 16 (8) (2019)
Binhong Li, Yang Huang, Jianfei Wu, Yunbo Huang, Bo Li, Qingzhu Zhang, Ling Yang, Fayu Wan, Jiajun Luo, Zhengsheng Han, Huaxiang Yin
Constant voltage stress characterization of nFinFET transistor during total ionizing dose experiment. Microelectron. Reliab. (2018)
Bo Li, Yunbo Huang, Ling Yang, Qingzhu Zhang, Zhongshan Zheng, Binhong Li, Huiping Zhu, Jianhui Bu, Huaxiang Yin, Jiajun Luo, Zhengsheng Han, Haibin Wang
Process variation dependence of total ionizing dose effects in bulk nFinFETs. Microelectron. Reliab. (2018)
Weizhong Chen, Qiao Guo, Lijun He, Zhengsheng Han, Yuchan Wang, Xiaoyun Li
A RC-IGBT with built-in free wheeling diode controlled by MOSFET. IEICE Electron. Express 14 (19) (2017)
Yulong Zhang, Lulu Wang, Bo Gao, Lixin Wang, Jiajun Luo, Zhengsheng Han
System Analysis and PHM Methods for Power Devices Based on Physics-of-Failure. DSA (2017)
Zhongshan Zheng, Zhentao Li, Gengsheng Chen, Jiajun Luo, Zhengsheng Han
Roles of the gate length and width of the transistors in increasing the single event upset resistance of SRAM cells. ASICON (2017)
Yiqi Wang, Fazhao Zhao, Mengxin Liu, Zhengsheng Han
A new full current mode sense amplifier with compensation circuit. ASICON (2011)