Gaobo Xu

Publication Activity (10 Years)

Years Active: 2017-2023
Publications (10 Years): 6

Top Topics

Recent Progress

Field Effect Transistors

Knowledge Processing

Top Venues

Sci. China Inf. Sci.

Adv. Intell. Syst.

Publications

Zhaohao Zhang, Guoliang Tian, Jiali Huo, Fang Zhang, Qingzhu Zhang, Gaobo Xu, Zhenhua Wu, Yan Cheng, Yan Liu, Huaxiang Yin
Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications. Sci. China Inf. Sci. 66 (10) (2023)
Zhaohao Zhang, Guohui Zhan, Weizhuo Gan, Yan Cheng, Xumeng Zhang, Yue Peng, Jianshi Tang, Fan Zhang, Jiali Huo, Gaobo Xu, Qingzhu Zhang, Zhenhua Wu, Yan Liu, Hangbing Lv, Qi Liu, Genquan Han, Huaxiang Yin, Jun Luo, Wenwu Wang
Ultralow-Power Compact Artificial Synapse Based on a Ferroelectric Fin Field-Effect Transistor for Spatiotemporal Information Processing. Adv. Intell. Syst. 5 (11) (2023)
Xueqin Yang, Yannan Xu, Jinshun Bi, Kai Xi, Linjie Fan, Lanlong Ji, Gaobo Xu
Total ionizing dose effects on aluminum oxide/zirconium-doped hafnium oxide stack ferroelectric tunneling junctions. Sci. China Inf. Sci. 65 (6) (2022)
Gangping Yan, Jinshun Bi, Gaobo Xu, Kai Xi, Bo Li, Linjie Fan, Huaxiang Yin
Simulation of Total Ionizing Dose (TID) Effects Mitigation Technique for 22 nm Fully-Depleted Silicon-on-Insulator (FDSOI) Transistor. IEEE Access 8 (2020)
Guoliang Tian, Jinshun Bi, Gaobo Xu, Kai Xi, Xueqin Yang, Sandip Majumdar, Huaxiang Yin, Qiuxia Xu, Wenwu Wang
Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors. Sci. China Inf. Sci. 63 (12) (2020)
Yannan Xu, Jinshun Bi, Gaobo Xu, Kai Xi, Bo Li, Ming Liu
-based MOS capacitor. Sci. China Inf. Sci. 60 (12) (2017)