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Simulation of Total Ionizing Dose (TID) Effects Mitigation Technique for 22 nm Fully-Depleted Silicon-on-Insulator (FDSOI) Transistor.

Gangping YanJinshun BiGaobo XuKai XiBo LiLinjie FanHuaxiang Yin
Published in: IEEE Access (2020)
Keyphrases
  • silicon on insulator
  • high speed
  • metal oxide semiconductor